{
  "abstract": "Nitrogen-polar (N-polar) AlGaN-channel high electron mobility transistors (HEMTs) offer a promising pathway to overcome the limitations of equivalent metal-polar (M-polar) devices, particularly the high contact resistance associated with increased aluminum content. In this work, we report the growth and fabrication of N-polar AlGaN-channel HEMTs on a silicon substrate by ammonia molecular beam epitaxy (NH3-MBE). N-polarity is achieved using an epitaxial NbN polarity-inversion layer, enabling the growth of a buffer stack with adequate structural and electrical quality. Two heterostructure designs are investigated. Capacitance–voltage and Hall measurements confirm the formation of a high-density two-dimensional electron gas with sheet carrier densities up to 2.4×1013 cm−2. Owing to the elimination of the Al-rich barrier between the surface and the channel (present in M-polar configuration) and improving surface morphology, encouraging low-resistance Ohmic contacts are achieved, with contact resistance reduced below 1 Ω mm on the Al0.2Ga0.8N channel. These results demonstrate the viability of N-polar AlGaN-channel HEMTs on silicon and highlight their potential for next-generation ultra-wide-bandgap power devices on Si.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 5,
  "authors": [
    {
      "name": "A. Barbier-Cueil"
    },
    {
      "name": "J. Mehta"
    },
    {
      "name": "A. Pédèches"
    },
    {
      "name": "F. Medjdoub"
    },
    {
      "name": "F. Semond"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/7fxa9ym1rzrpe.bib",
  "cited_by": 0,
  "doi": "10.1063/5.0329237",
  "fulltext_url": null,
  "id": "7fxa9ym1rzrpe",
  "issns": [
    "0003-6951",
    "1077-3118"
  ],
  "landing_url": "https://hal.science/hal-05678244v1",
  "language": "en",
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.phys"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7166568596",
  "pdf_url": "https://hal.science/hal-05678244/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-06-29",
  "publisher": "American Institute of Physics",
  "ris": "https://research.draconitic.com/paper/7fxa9ym1rzrpe.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:46Z",
      "native_id": "hal-05678244",
      "source": "hal",
      "url": "https://hal.science/hal-05678244v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3104|GaN-based semiconductor devices and materials",
      "subfield": "condensed-matter"
    }
  ],
  "title": "N-polar AlGaN HEMTs on silicon for reduced contact resistance",
  "title_text": "N-polar AlGaN HEMTs on silicon for reduced contact resistance",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:46Z",
  "url": "https://research.draconitic.com/paper/7fxa9ym1rzrpe",
  "venue": "Applied Physics Letters",
  "versions": []
}