{
  "abstract": "Cubic boron arsenide (c-BAs) is a promising ultrahigh thermal conductivity semiconductor, but its direct synthesis on lattice-mismatched substrates remains challenging. Here, we demonstrate the synthesis of nanocrystalline c-BAs thin films on GaAs(100) substrates using gas source molecular beam epitaxy. X-ray photoelectron spectroscopy reveals an optimal growth temperature window of 250-400 C to maintain near stoichiometry and suppress severe arsenic loss. Surface and structural characterizations via atomic force microscopy, reflection high-energy electron diffraction, and grazing-incidence X-ray diffraction demonstrate a Volmer-Weber 3D island growth mode and a preferential crystallographic alignment with the GaAs substrate. High-resolution transmission electron microscopy confirms a chemically sharp interface without gallium interdiffusion into the c-BAs layer. These findings establish an initial step for the integration of c-BAs into advanced thermal and optoelectronic platforms.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.27460",
  "author_total": 6,
  "authors": [
    {
      "name": "Matthew A. Delmont"
    },
    {
      "name": "Yu Wu"
    },
    {
      "name": "Han-Hsuan Wu"
    },
    {
      "name": "Xiaoqing Pan"
    },
    {
      "name": "Christopher J. Palmstrom"
    },
    {
      "name": "Bolin Liao"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/7pr1apzyey3rf.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.27460",
  "fulltext_url": null,
  "id": "7pr1apzyey3rf",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.27460",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2505|Boron and Carbon Nanomaterials Research"
    ]
  ],
  "openalex": "W7223085375",
  "pdf_url": "https://arxiv.org/pdf/2610.27460",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-20",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/7pr1apzyey3rf.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:34:04Z",
      "native_id": "2610.27460",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.27460"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Nanocrystalline cubic boron arsenide growth on GaAs(100) by gas source molecular beam epitaxy",
  "title_text": "Nanocrystalline cubic boron arsenide growth on GaAs(100) by gas source molecular beam epitaxy",
  "type": "preprint",
  "updated_at": "2026-10-30T12:34:04Z",
  "url": "https://research.draconitic.com/paper/7pr1apzyey3rf",
  "venue": "arXiv",
  "versions": []
}