{
  "abstract": "Two-dimensional materials are promising candidates for electronic applications beyond the operating limits of conventional semiconductor technologies. Within this class, transition-metal dichalcogenides offer attractive properties for field-effect transistor operation, with tungsten disulphide (WS$_2$) emerging as a particularly promising material for operation at cryogenic temperatures. Here, we investigate the electrical performance of a back-gated multilayer WS$_2$ transistor at deep cryogenic temperature, down to 20 mK. The device remains strongly gate-tunable throughout the cryogenic regime, with an effective on/off current ratio exceeding $10^{5}$. Most notably, the low-temperature turn-on characteristics exhibit reproducible shoulder-like features, which we describe using a phenomenological model comprising multiple effective conduction branches operating in parallel.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.39878",
  "author_total": 8,
  "authors": [
    {
      "name": "Megan Powell"
    },
    {
      "name": "Vilas Patil"
    },
    {
      "name": "Hazel Neill"
    },
    {
      "name": "Stephen O'Sullivan"
    },
    {
      "name": "Paul K. Hurley"
    },
    {
      "name": "Lida Ansari"
    },
    {
      "name": "Farzan Gity"
    },
    {
      "name": "Alessandro Rossi"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/7rtyf0kknemmx.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.39878",
  "fulltext_url": null,
  "id": "7rtyf0kknemmx",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.39878",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7215073804",
  "pdf_url": "https://arxiv.org/pdf/2609.39878",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-30",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/7rtyf0kknemmx.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:25:49Z",
      "native_id": "2609.39878",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.39878"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Multi-Branch Transport in a Back-gated WS$_2$ Transistor at Deep-Cryogenic Temperature",
  "title_text": "Multi-Branch Transport in a Back-gated WS_2 Transistor at Deep-Cryogenic Temperature",
  "type": "preprint",
  "updated_at": "2026-10-30T12:25:49Z",
  "url": "https://research.draconitic.com/paper/7rtyf0kknemmx",
  "venue": "arXiv",
  "versions": []
}