{
  "abstract": "AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) and metal–semiconductor–metal photodetectors (MSM-PDs) were integrated on Al2O3 and 4H-SiC substrates to quantify the impact of substrate selection on cryogenic electrical stability and ultraviolet (UV) optoelectronic performance. The HEMT/SiC structure exhibited a higher peak transconductance (gm) of 1.56 mS/2.34 mS at 300 K/130 K compared to the HEMT/Al2O3 structure (1.27 mS/1.83 mS). At 300 K, the gate-source voltage corresponding to peak gm was −0.3 V for the HEMT/SiC compared to −2.1 V for the HEMT/Al2O3, indicating different strain-induced polarization effects. For integrated sensing, the peak relative spectral response wavelengths were observed at 300 nm (on Al2O3) and 370 nm (on SiC). High-resolution characterization confirms that improved crystal quality and carrier transport in SiC-based heterostructures result from reduced lattice mismatch at the GaN/SiC interface. These findings establish the AlGaN/AlN/GaN-on-SiC platform as a compelling architecture for high-efficiency, switching GaN electronics and integrated cryogenic optoelectronic applications.",
  "abstract_shown": true,
  "affiliations": [
    "National Chung Hsing University , , 145 Xingda Rd. , ,",
    "National Changhua University of Education , , No. 2, Shi-Da Rd. , ,"
  ],
  "article_type": null,
  "arxiv": null,
  "author_total": 9,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Kun-Pin Huang"
    },
    {
      "affs": [
        0
      ],
      "name": "Maria Kiran Kocherla",
      "orcid": "0009-0005-3861-5443"
    },
    {
      "affs": [
        0
      ],
      "name": "Kai-Wei Chien"
    },
    {
      "affs": [
        0
      ],
      "name": "Shih-Hasan Chiu"
    },
    {
      "affs": [
        0
      ],
      "name": "Yu-Cheng Kao"
    },
    {
      "affs": [
        0
      ],
      "name": "Safeer Hussain Rather"
    },
    {
      "affs": [
        1
      ],
      "name": "Der-Yuh Lin",
      "orcid": "0000-0001-8525-0655"
    },
    {
      "affs": [
        0
      ],
      "name": "Hongta Yang",
      "orcid": "0000-0002-5822-1469"
    },
    {
      "affs": [
        0,
        1
      ],
      "name": "Chia-Feng Lin",
      "orcid": "0000-0002-1743-4337"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/80abh73wwcjkf.bib",
  "cited_by": 0,
  "doi": "10.1021/acsomega.6c02241",
  "fulltext_url": null,
  "id": "80abh73wwcjkf",
  "issns": [
    "2470-1343"
  ],
  "landing_url": "https://pubs.acs.org/acsodf/article/doi/10.1021/acsomega.6c02241/5464856/Substrate-Dependent-Cryogenic-and-UV-Performance",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [],
  "openalex": null,
  "pdf_url": "https://pubs.acs.org/doi/pdf/10.1021/acsomega.6c02241",
  "pmcid": null,
  "pmid": null,
  "published": "2026-11-05",
  "publisher": "American Chemical Society (ACS)",
  "ris": "https://research.draconitic.com/paper/80abh73wwcjkf.ris",
  "sources": [
    {
      "first_seen": "2026-11-05T12:20:52Z",
      "native_id": "10.1021/acsomega.6c02241",
      "source": "crossref",
      "url": "https://pubs.acs.org/acsodf/article/doi/10.1021/acsomega.6c02241/5464856/Substrate-Dependent-Cryogenic-and-UV-Performance"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "issn:2470-1343",
      "subfield": "general"
    }
  ],
  "title": "Substrate-Dependent Cryogenic and UV Performance of AlGaN/AlN/GaN HEMTs and Photodetectors",
  "title_text": "Substrate-Dependent Cryogenic and UV Performance of AlGaN/AlN/GaN HEMTs and Photodetectors",
  "type": "peer-reviewed",
  "updated_at": "2026-11-07T00:21:06Z",
  "url": "https://research.draconitic.com/paper/80abh73wwcjkf",
  "venue": "ACS Omega",
  "versions": []
}