{
  "abstract": "Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer quantum wells grown on AlSb quasi-substrates. In macroscopic Hall bars exceeding the phase coherence length, a multi-probe analysis reveals an insulating bulk and a constant edge resistance over a wide electric-field range. In microscopic devices with edge lengths below the phase coherence lengths, the edge resistance remains robust and quantized across a broad field range, revealing the intrinsic resilience of helical edge channels to electric-field perturbations. Only beyond a threshold value, parasitic edge contributions emerge. These results establish dual gating as a reliable strategy to suppress parasitic conduction while stabilizing helical edge transport, providing a versatile and reproducible platform for tunable topological transport in III-V quantum spin Hall systems.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2607.19051",
  "author_total": 15,
  "authors": [
    {
      "name": "Manuel Meyer"
    },
    {
      "name": "Tobias Fähndrich"
    },
    {
      "name": "Sebastian Schmid"
    },
    {
      "name": "Justus Walter"
    },
    {
      "name": "Martin Kamp"
    },
    {
      "name": "Adriana Wolf"
    },
    {
      "name": "Sergey Krishtopenko"
    },
    {
      "name": "Guillaume Sigu"
    },
    {
      "name": "Jean-Baptiste Rodriguez"
    },
    {
      "name": "Eric Tournie"
    },
    {
      "name": "Gerald Bastard"
    },
    {
      "name": "Frederic Teppe"
    },
    {
      "name": "Fabian Hartmann"
    },
    {
      "name": "Sven Höfling"
    },
    {
      "name": "Benoit Jouault"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/812fk7ymk0a9r.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2607.19051",
  "fulltext_url": null,
  "id": "812fk7ymk0a9r",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2607.19051",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2607.19051",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-05",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/812fk7ymk0a9r.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:27:01Z",
      "native_id": "2607.19051",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2607.19051"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators",
  "title_text": "Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators",
  "type": "preprint",
  "updated_at": "2026-10-30T12:27:01Z",
  "url": "https://research.draconitic.com/paper/812fk7ymk0a9r",
  "venue": "arXiv",
  "versions": []
}