{
  "abstract": "Color centers in silicon offer great possibilities for scalable quantum technologies. The M-center, proposed to originate from a carbon-hydrogen complex, offers telecommunications-band emission and a paramagnetic ground state similar to the T-center. Here, we report on photoluminescence lines in the vicinity of the M-center and investigate their properties, including their dependence on temperature, implantation fluence, implantation isotope, and annealing temperature. Three emission lines are observed that are blue-shifted by 1.1, 2.8 and 3.6 meV relative to the 761 meV zero phonon line of the M center, where the 2.8 meV line exhibits negative thermal quenching and is therefore proposed to originate from a second excited state of the M-center. The remaining blue-shifted emission lines, together with two additional red-shifted (4.7 and 6.4 meV) emission lines display normal thermal quenching, and are unaffected by an isotope shift of the implanted carbon atom ($^{12}$C versus $^{13}$C implantation) and implantation fluence. Thus, they likely arise either from other defects with similar emission energies or from a perturbed configuration of the M-center.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2608.30790",
  "author_total": 9,
  "authors": [
    {
      "name": "Aurora Teien"
    },
    {
      "name": "David R. Gongora"
    },
    {
      "name": "Arnulf Johannes Snedker-Nielsen"
    },
    {
      "name": "Viktor Bobal"
    },
    {
      "name": "Augustinas Galeckas"
    },
    {
      "name": "Peter Granum"
    },
    {
      "name": "Stefano Paesani"
    },
    {
      "name": "Marianne Etzelmüller Bathen"
    },
    {
      "name": "Lasse Vines"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/830egkjyjajv2.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2608.30790",
  "fulltext_url": null,
  "id": "830egkjyjajv2",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2608.30790",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2505|Silicon Nanostructures and Photoluminescence"
    ]
  ],
  "openalex": "W7204946867",
  "pdf_url": "https://arxiv.org/pdf/2608.30790",
  "pmcid": null,
  "pmid": null,
  "published": "2026-08-31",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/830egkjyjajv2.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:41Z",
      "native_id": "2608.30790",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2608.30790"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Fine structure of the M-center in Si",
  "title_text": "Fine structure of the M-center in Si",
  "type": "preprint",
  "updated_at": "2026-10-30T12:17:41Z",
  "url": "https://research.draconitic.com/paper/830egkjyjajv2",
  "venue": "arXiv",
  "versions": []
}