{
  "abstract": "Overcoming the approximately 60~mV/dec Boltzmann limit of the subthreshold swing remains a central challenge for low-power nanoelectronics. Negative-capacitance field-effect transistors address it by amplifying the channel potential, but their effectiveness is constrained by capacitance matching and by the quantum capacitance of conventional channels. Here we model a negative-capacitance bandgap-change field-effect transistor (NC-BCFET), in which the ferroelectric gate stack instead amplifies the electric field that opens the bandgap of the channel, using experimentally proven materials: bilayer graphene as a channel with an electrically tunable bandgap and Al$_{0.55}$Sc$_{0.45}$N as the negative-capacitance ferroelectric. Our self-consistent framework couples a four-band tight-binding Hamiltonian with GW-corrected screening, a quasistatic Landau--Devonshire ferroelectric response, and ballistic Landauer--Büttiker transport. Negative capacitance amplifies the interlayer potential difference, compressing the switching window 37-fold relative to a dielectric-gated control. At 300~K, the optimized NC-BCFET achieves a subthreshold swing of 15~mV/dec, four times below the Boltzmann limit, improving to 2.5~mV/dec at 100~K. The room-temperature on/off ratio is limited to $\\sim 10^{2}$ by the bandgap of bilayer graphene. The concept extends directly to materials with larger field-tunable bandgaps, where deep subthermionic switching and high on/off ratios can be achieved together at room temperature.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.23505",
  "author_total": 6,
  "authors": [
    {
      "name": "Rahul B Awale"
    },
    {
      "name": "Mike Klymenko"
    },
    {
      "name": "Yuefeng Yin"
    },
    {
      "name": "Nikhil V Medhekar"
    },
    {
      "name": "Bhaskaran Muralidharan"
    },
    {
      "name": "Michael S Fuhrer"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/83zh5t7nfee80.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.23505",
  "fulltext_url": null,
  "id": "83zh5t7nfee80",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.23505",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.other"
    ],
    [
      "openalex",
      "2208|Ferroelectric and Negative Capacitance Devices"
    ]
  ],
  "openalex": "W7214034475",
  "pdf_url": "https://arxiv.org/pdf/2609.23505",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-20",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/83zh5t7nfee80.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:23:19Z",
      "native_id": "2609.23505",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.23505"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Sub-Thermionic Switching in a Negative-Capacitance Bandgap-Change Field-Effect Transistor",
  "title_text": "Sub-Thermionic Switching in a Negative-Capacitance Bandgap-Change Field-Effect Transistor",
  "type": "preprint",
  "updated_at": "2026-10-30T12:23:19Z",
  "url": "https://research.draconitic.com/paper/83zh5t7nfee80",
  "venue": "arXiv",
  "versions": []
}