{
  "abstract": "Electrical contacts often limit the performance of atomically thin semiconductor devices. The Schottky barrier height (SBH) is conventionally treated as a local interface property, yet reported values for the same metal/2D-semiconductor contact vary by hundreds of meV. Here we show that, in top contacts, the effective SBH exhibits a pronounced nonlocal electrostatic dependence on defects near the contact edge, beyond the conventional local interface framework. A nonlocal electrostatic model, supported by density-functional-theory-based transport calculations for Ti--MoS$_2$ and Au--MoS$_2$, captures the large, metal-dependent variations in SBH as a function of defect position relative to the contact edge. These results provide a unified explanation for the longstanding variability in experimentally extracted SBHs and establish nonlocal electrostatics, mediated by edge-proximal defects, as a key mechanism governing carrier injection in 2D contacts.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2607.08253",
  "author_total": 2,
  "authors": [
    {
      "name": "Hangbo Zhou"
    },
    {
      "name": "Yong-Wei Zhang"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/8p10ys8k4646m.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2607.08253",
  "fulltext_url": null,
  "id": "8p10ys8k4646m",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2607.08253",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2607.08253",
  "pmcid": null,
  "pmid": null,
  "published": "2026-07-09",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/8p10ys8k4646m.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:29:11Z",
      "native_id": "2607.08253",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2607.08253"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Nonlocal Electrostatic Origin of Schottky-Barrier Variability in 2D Contacts",
  "title_text": "Nonlocal Electrostatic Origin of Schottky-Barrier Variability in 2D Contacts",
  "type": "preprint",
  "updated_at": "2026-10-30T12:29:11Z",
  "url": "https://research.draconitic.com/paper/8p10ys8k4646m",
  "venue": "arXiv",
  "versions": [
    {
      "doi": "10.1021/acs.nanolett.6c03959",
      "pid": null,
      "relation": "published-as",
      "title": null,
      "venue": null
    }
  ]
}