{
  "abstract": "Resistive memory technologies offer a compelling advantage for in-memory computing. However, realizing a device architecture that simultaneously achieves high computational precision, efficiency, and density has remained elusive due to inherent trade-offs among these performance metrics. Here, we introduce a com- pact phase-change memory device architecture that combines an ultra-confined active switching volume for enhanced electro-thermal efficiency with a non-insulating thin film that suppresses temporal conductance fluctuations. We analytically model and back-end integrate these devices into crossbar arrays. Even with conventional, undoped phase-change materials, the device architecture enables a computational precision approaching 6 bits, low conductance values below 50 μS with an adequate conductance window, and a viable pathway toward sub-100 μA programming currents under nominal operating voltages.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2608.29338",
  "author_total": 7,
  "authors": [
    {
      "name": "Ghazi Sarwat Syed"
    },
    {
      "name": "Loris Coccia"
    },
    {
      "name": "Vara Prasad Jonnalagadda"
    },
    {
      "name": "Antonio Massimiliano Mio"
    },
    {
      "name": "Asit Ray"
    },
    {
      "name": "Matthew BrightSky"
    },
    {
      "name": "Abu Sebastian"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/8q1bzrfk7pgqa.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2608.29338",
  "fulltext_url": null,
  "id": "8q1bzrfk7pgqa",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2608.29338",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2208|Advanced Memory and Neural Computing"
    ]
  ],
  "openalex": "W7204877010",
  "pdf_url": "https://arxiv.org/pdf/2608.29338",
  "pmcid": null,
  "pmid": null,
  "published": "2026-08-29",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/8q1bzrfk7pgqa.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:41Z",
      "native_id": "2608.29338",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2608.29338"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Analogue Phase Change Computational Memory with High Precision Reads and Energy Efficient Writes",
  "title_text": "Analogue Phase Change Computational Memory with High Precision Reads and Energy Efficient Writes",
  "type": "preprint",
  "updated_at": "2026-10-30T12:17:41Z",
  "url": "https://research.draconitic.com/paper/8q1bzrfk7pgqa",
  "venue": "arXiv",
  "versions": []
}