{
  "abstract": "High contact resistances in atomically thin semiconductors often mask intrinsic electrical transport properties, particularly at low carrier densities where exotic correlated states emerge. We introduce optical voltage profiling, a noninvasive wide-field technique that replaces local voltage probes with a proximal monolayer MoSe$_2$ exciton sensor. Isolated by thin hexagonal boron nitride, this sensor converts the target's local electrostatic potential into spatially resolved modulations of exciton reflectance. Through pixel-wise in situ calibration, these signals yield quantitative two-dimensional voltage maps of an actively biased semiconductor device. Using this method, we demonstrate the carrier-density-driven metal-insulator transition in bilayer MoSe$_2$ and obtain channel resistances below 1 k$Ω$ despite M$Ω$-scale two-terminal resistances in the metallic region. The optically derived resistance exhibits a metal-insulator crossover near the resistance quantum $h/e^2$, and the voltage maps and reconstructed local conductivity reveal pronounced spatial heterogeneity in both insulating and metallic regimes. Beyond resolving channel resistance under high contact-resistance conditions, the technique provides spatially resolved access to microscopic transport heterogeneity in functional van der Waals devices.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2608.18382",
  "author_total": 9,
  "authors": [
    {
      "name": "Ha-Leem Kim"
    },
    {
      "name": "Hyungbin Lim"
    },
    {
      "name": "Yuanyi Yang"
    },
    {
      "name": "Ruishi Qi"
    },
    {
      "name": "Ruichen Xia"
    },
    {
      "name": "Can Uzundal"
    },
    {
      "name": "Takashi Taniguchi"
    },
    {
      "name": "Kenji Watanabe"
    },
    {
      "name": "Feng Wang"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/8vgm92jgs373y.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2608.18382",
  "fulltext_url": null,
  "id": "8vgm92jgs373y",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2608.18382",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.str-el"
    ],
    [
      "arxiv",
      "physics.optics"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7203868299",
  "pdf_url": "https://arxiv.org/pdf/2608.18382",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-01",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/8vgm92jgs373y.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:18:16Z",
      "native_id": "2608.18382",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2608.18382"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    },
    {
      "field": "physics",
      "origin": "arxiv:physics.optics",
      "subfield": "optics-photonics"
    }
  ],
  "title": "Optical Voltage Profiling of 2D Semiconductors via Proximal Exciton Sensing",
  "title_text": "Optical Voltage Profiling of 2D Semiconductors via Proximal Exciton Sensing",
  "type": "preprint",
  "updated_at": "2026-10-30T12:18:16Z",
  "url": "https://research.draconitic.com/paper/8vgm92jgs373y",
  "venue": "arXiv",
  "versions": []
}