{
  "abstract": "Due to strong spin-orbit coupling, large Landé $g$-factor, and a highly transparent interface, the two-dimensional electron gas (2DEG) in InAs quantum wells provides an ideal platform for the exploration of topological superconductivity in hybrid semiconductor-superconductor heterostructures. Reduction of disorder in the semiconductor remains a primary challenge to the disambiguation of subtle interaction effects. Here we demonstrate very high mobility InAs 2DEGs grown on insulating InP substrates. Utilizing a convex compositional grading profile in an InAlAs metamorphic buffer we demonstrate InAs quantum wells with thickness greater than 10 nm without need of Ga-containing cladding layers. We examine structural and electrical transport properties of these heterostructures. Advances in the design of the metamorphic InAlAs buffer result in low-temperature electron mobility exceeding $1.7\\times10^6$ cm$^2$ V$^{-1}$ s$^{-1}$ at 2DEG density $\\leq3.2\\times10^{11}$ cm$^{-2}$, the highest value yet reported for this material system.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.28795",
  "author_total": 7,
  "authors": [
    {
      "name": "Tyler Lindemann"
    },
    {
      "name": "Rojila Ghimire"
    },
    {
      "name": "Alejandro Alcaraz Ramirez"
    },
    {
      "name": "Ahmad Azizimanesh"
    },
    {
      "name": "Sergei Gronin"
    },
    {
      "name": "Ray Kallaher"
    },
    {
      "name": "Michael J. Manfra"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/9088tkdjavpst.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.28795",
  "fulltext_url": null,
  "id": "9088tkdjavpst",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.28795",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "3107|Semiconductor Quantum Structures and Devices"
    ]
  ],
  "openalex": "W7214404711",
  "pdf_url": "https://arxiv.org/pdf/2609.28795",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-23",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/9088tkdjavpst.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:24:11Z",
      "native_id": "2609.28795",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.28795"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization",
  "title_text": "Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization",
  "type": "preprint",
  "updated_at": "2026-10-30T12:24:11Z",
  "url": "https://research.draconitic.com/paper/9088tkdjavpst",
  "venue": "arXiv",
  "versions": []
}