{
  "abstract": "Carbon nanotube field-effect transistors (CNTFETs) are promising for monolithic 3D integration with silicon CMOS circuits in back-end-of-line (BEOL) processes. Further reduction in off-state leakage is essential for practical applications. In this study, we develop a low-temperature cleaning process for CNT-deposited wafers using a sublimable CNT dispersant. The process is carried out below 250 °C, making it BEOL-compatible, and does not deteriorate CNT morphology or lattice structure, as confirmed by atomic force microscopy and Raman spectroscopy. As a result, gate-induced drain leakage current originating from residual dispersants is reduced by approximately one order of magnitude. In addition, improvements in on-current, subthreshold slope, and threshold voltage variability are observed after the cleaning process. This study demonstrates a material-enabled approach to improve the transfer characteristics of CNTFETs and provides a practical route toward low-power CNT electronics.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.13583",
  "author_total": 7,
  "authors": [
    {
      "name": "Takumi Inaba"
    },
    {
      "name": "Yuichi Kato"
    },
    {
      "name": "Yoko Iizumi"
    },
    {
      "name": "Yasuhiko Fujita"
    },
    {
      "name": "Kazufumi Kobashi"
    },
    {
      "name": "Takahiro Morimoto"
    },
    {
      "name": "Toshiya Okazaki"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/9277jfw3b777z.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.13583",
  "fulltext_url": null,
  "id": "9277jfw3b777z",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.13583",
  "language": null,
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2505|Carbon Nanotubes in Composites"
    ]
  ],
  "openalex": "W7213366923",
  "pdf_url": "https://arxiv.org/pdf/2609.13583",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-11",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/9277jfw3b777z.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:21:25Z",
      "native_id": "2609.13583",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.13583"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature",
  "title_text": "Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature",
  "type": "preprint",
  "updated_at": "2026-10-30T12:21:25Z",
  "url": "https://research.draconitic.com/paper/9277jfw3b777z",
  "venue": "arXiv",
  "versions": []
}