{
  "abstract": "A simple electrostatic two-equation model for dual-layer thin-film transistor (TFT) operation is developed. The model distributes electrostatic charge between the top and bottom semiconductor layers, and the resulting transfer and mobility curves accurately simulate experimental dual-layer a-IGZO/a-IZO TFT operation. The model further provides an analytic expression that maps charge confinement in the high-mobility a-IZO bottom semiconductor layer with the a-IGZO top-layer thickness and the conduction-band offset. By considering both a-IGZO/a-IZO layer charge partition and competing thickness-dependent oxygen vacancy trap density effects, the model suggests an optimal a-IGZO layer thickness of 9 to 12 nm. Importantly, this general electrostatic model extends to most dual-layer TFT systems and calculates how the top semiconductor layer TFT turn-on voltage changes sharply with the conduction band offset and layer thickness.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": "Journal reference: Applied Physics Letters Electronic Devices 2, 046101 (2026)",
  "arxiv": "2606.13765",
  "author_total": 3,
  "authors": [
    {
      "name": "Måns J. Mattsson"
    },
    {
      "name": "John F. Wager"
    },
    {
      "name": "Matt W. Graham"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/93shxmnyd9kbc.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2606.13765",
  "fulltext_url": null,
  "id": "93shxmnyd9kbc",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2606.13765",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2606.13765",
  "pmcid": null,
  "pmid": null,
  "published": "2026-06-11",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/93shxmnyd9kbc.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:27:01Z",
      "native_id": "2606.13765",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2606.13765"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Electrostatic Charge Model for Dual-Layer Oxide Thin-Film Transistors",
  "title_text": "Electrostatic Charge Model for Dual-Layer Oxide Thin-Film Transistors",
  "type": "preprint",
  "updated_at": "2026-10-30T12:27:01Z",
  "url": "https://research.draconitic.com/paper/93shxmnyd9kbc",
  "venue": "arXiv",
  "versions": [
    {
      "doi": "10.1063/5.0348180",
      "pid": null,
      "relation": "published-as",
      "title": null,
      "venue": null
    }
  ]
}