{
  "abstract": "Understanding and controlling charge transfer at graphene-semiconductor interfaces is essential for the integration of two-dimensional materials into silicon-compatible technologies. Here, we combine ultraviolet photoelectron spectroscopy (UPS), Kelvin probe force microscopy (KPFM), angle-resolved photoemission spectroscopy (ARPES), scanning tunneling spectroscopy (STS) and density functional theory (DFT) to resolve work-function modulation and electronic coupling in graphene grown on Ge(001)/Si(001). UPS and KPFM reveal a spatially non-uniform work-function landscape correlated with the nanofaceted morphology of the substrate. ARPES and DFT calculations for the pristine interface consistently indicate n-type doping and electron transfer from Ge to graphene. In contrast, modeling of the oxidized interface predicts a reversal to p-type doping, providing a plausible explanation for the different doping polarities reported in the literature. Machine-learning-assisted classification of the STS data resolves distinct local electronic regimes, ranging from nearly free-standing graphene on nanofacet tops to more strongly coupled inter-facet regions and nanoribbon-like regions with distinct local electronic responses. By identifying the mechanisms governing local graphene-substrate interactions and charge transfer, our study provides guidelines for tailoring the synthesis process and minimizing defect formation during delamination. These insights support the production of high-quality graphene layers for electronic devices and for transfer as protective coatings for air-sensitive materials.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.37827",
  "author_total": 14,
  "authors": [
    {
      "name": "Pawel Dabrowski"
    },
    {
      "name": "Przemysław Przybysz"
    },
    {
      "name": "Maciej Rogala"
    },
    {
      "name": "Iaroslav Lutsyk"
    },
    {
      "name": "Paweł Krukowski"
    },
    {
      "name": "Witold Kozłowski"
    },
    {
      "name": "Michał Piskorski"
    },
    {
      "name": "Piotr Milczarski"
    },
    {
      "name": "Iwona Pasternak"
    },
    {
      "name": "Jakub Sitek"
    },
    {
      "name": "Marek Kopciuszyński"
    },
    {
      "name": "Ryszard Zdyb"
    },
    {
      "name": "Jagoda Sławińska"
    },
    {
      "name": "Pawel J. Kowalczyk"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/9f8ve7d6n0ec6.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.37827",
  "fulltext_url": null,
  "id": "9f8ve7d6n0ec6",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.37827",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2609.37827",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-29",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/9f8ve7d6n0ec6.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:25:31Z",
      "native_id": "2609.37827",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.37827"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Electronic Coupling and Charge-Transfer Landscape of Graphene on Ge(001)/Si(001): Multiscale Analysis Assisted by Machine Learning",
  "title_text": "Electronic Coupling and Charge-Transfer Landscape of Graphene on Ge(001)/Si(001): Multiscale Analysis Assisted by Machine Learning",
  "type": "preprint",
  "updated_at": "2026-10-30T12:25:31Z",
  "url": "https://research.draconitic.com/paper/9f8ve7d6n0ec6",
  "venue": "arXiv",
  "versions": []
}