{
  "abstract": "Ab initio calculations were used to elucidate the properties of the polar surfaces of III-V tetrahedral semiconductors, i.e., metal- and nonmetal-terminated. The systems considered were clean wurtzite gallium nitride (i.e. (0001) and (000-1) GaN surfaces), zinc blende gallium phosphide (i.e. (111) and (-1-1-1) GaP), gallium arsenide (i.e. (111) and (-1-1-1) GaAs), and (111) and (-1-1-1) GaSb surfaces. The calculated data include the crystallographic structure and the electronic states of the termination atoms on both sides, i.e. their positions, energies, and occupations. All nonmetal-terminated surfaces exhibit no reconstruction, and their broken-bond states are located in the vicinity of the valence band maxima (VBM), pinning the Fermi level. The Ga-terminated surface exhibited (4 x 4) reconstruction related to the division of termination atoms into sp3 and sp2 hybridized in proportions of 6 to 10, based on charge redistribution according to the electron counting rule (ECR). Thus, the broken-bond state is separated into two sets, occupied and empty, with the Fermi level located between them in the vicinity of the conduction band minimum (CBM).",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.41559",
  "author_total": 2,
  "authors": [
    {
      "name": "Pawel Strak"
    },
    {
      "name": "Stanisław Krukowski"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/9jczz5n5whf0q.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.41559",
  "fulltext_url": null,
  "id": "9jczz5n5whf0q",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.41559",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.41559",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-30",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/9jczz5n5whf0q.ris",
  "sources": [
    {
      "first_seen": "2026-11-02T12:21:15Z",
      "native_id": "2610.41559",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.41559"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. I. Clean surface properties",
  "title_text": "Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. I. Clean surface properties",
  "type": "preprint",
  "updated_at": "2026-11-04T15:20:51Z",
  "url": "https://research.draconitic.com/paper/9jczz5n5whf0q",
  "venue": "arXiv",
  "versions": []
}