{
  "abstract": "In this paper, we have designed and analysed the dual cavity AlGaN/GaN Metal oxide semiconductor high electron mobility transistor (MOS-HEMT) heterojunction biosensor for biomolecule detection. The proposed biosensor uses triple-metal work functions (M ₁ , M ₂ and M ₃ ) to improve electric field distribution and electrostatic control. The proposed biosensor is evaluated using MCF-10 A (K = 4.5), Keratin(K = 8), Gelatin (K = 12), Hs578T (K = 22), MCF-7 (K = 27.5) and T47D (K = 32) biomolecules using Atlas Silvaco TCAD. The temperature dependent behaviour is examined at different temperatures (250 K, 300 K, 350 K and 400 K) to evaluate its electrical stability and sensing performance. In addition, Self-Heating Effect (SHE) is analysed using Sapphire and Diamonds substrate configurations. Self-heating increases the lattice temperature, leading to enhanced carrier scattering and reduced 2DEG mobility that can affect the electrical and sensing performance. A Diamond substrate AlN/Diamond substrate is used to improve heat dissipation and supress self-heating. The proposed device analyses the lattice temperature, DIBL, drain-current sensitivity and subthreshold swing (SS) sensitivity for different biomolecule effective dielectric constant. The Diamond substrate reduces the lattice temperature from 422 K to 324 K and increases the drain current sensitivity from 5.392 × 10 ¹ to 9.99 × 10 ¹ at K = 32. These results demonstrated that the proposed AlN/Diamond substrate device provides improved thermal management and sensing performance, making it suitable for biomedical applications.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 8,
  "authors": [
    {
      "name": "Rudra Lakshmi Prasanna"
    },
    {
      "name": "T. Srinivasa Ravi Kiran"
    },
    {
      "name": "Pidaparthy Vijaya"
    },
    {
      "name": "Gandikota Naga Chandrika"
    },
    {
      "name": "V Vijayasri Bolisetty"
    },
    {
      "name": "V. B. Sreenivasulu",
      "orcid": "0009-0004-0182-3057"
    },
    {
      "name": "Girija Sravani Kondavitee"
    },
    {
      "name": "Srinivasa Rao Karumuri"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/9qv0q8gqhfg6x.bib",
  "cited_by": 0,
  "doi": "10.1038/s41598-026-75787-4",
  "fulltext_url": null,
  "id": "9qv0q8gqhfg6x",
  "issns": [
    "2045-2322"
  ],
  "landing_url": "https://www.nature.com/articles/s41598-026-75787-4",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7223375693",
  "pdf_url": "https://www.nature.com/articles/s41598-026-75787-4_reference.pdf",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-23",
  "publisher": "Springer Science and Business Media LLC",
  "ris": "https://research.draconitic.com/paper/9qv0q8gqhfg6x.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:33Z",
      "native_id": "10.1038/s41598-026-75787-4",
      "source": "crossref",
      "url": "https://www.nature.com/articles/s41598-026-75787-4"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3104|GaN-based semiconductor devices and materials",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Self-heating effect analysis of a dual cavity AlGaN/GaN MOS-HEMT biosensor with AlN/diamond substrate",
  "title_text": "Self-heating effect analysis of a dual cavity AlGaN/GaN MOS-HEMT biosensor with AlN/diamond substrate",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:33Z",
  "url": "https://research.draconitic.com/paper/9qv0q8gqhfg6x",
  "venue": "Scientific Reports",
  "versions": []
}