{
  "abstract": "Semiconductor-superconductor hybrid materials form the basis of quantum devices ranging from gate-tunable qubit platforms to topological quantum applications. These applications require material combinations that offer strong spin-orbit coupling and a large superconducting gap. Here, we present a semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown Indium Arsenide Antimonide surface quantum well with an in-situ deposited Niobium layer. The Indium Arsenide Antimonide surface quantum well offers a low effective mass and strong spin-orbit interaction, while Niobium has high critical temperature and large critical magnetic field. The in-situ deposition results in a high-quality interface, enabling strong coupling to the quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV. Furthermore, a planar asymmetric SQUID exhibits gate-tunable oscillations from both the junction and the SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for exploring gate-tunable superconductivity and topological superconducting devices.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 10,
  "authors": [
    {
      "name": "Sjoerd Telkamp",
      "orcid": "0009-0000-0044-0506"
    },
    {
      "name": "Zijin Lei"
    },
    {
      "name": "Tommaso Antonelli"
    },
    {
      "name": "Christian Reichl"
    },
    {
      "name": "Ilya Besedin"
    },
    {
      "name": "Georg Jakobs"
    },
    {
      "name": "Stefan Fält",
      "orcid": "0000-0002-1134-9465"
    },
    {
      "name": "Christian Marty"
    },
    {
      "name": "Rüdiger Schott",
      "orcid": "0000-0002-9320-0313"
    },
    {
      "name": "Werner Wegscheider",
      "orcid": "0000-0002-2138-5558"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/a6t9y69bvjzke.bib",
  "cited_by": 0,
  "doi": "10.1038/s42005-026-02861-8",
  "fulltext_url": null,
  "id": "a6t9y69bvjzke",
  "issns": [
    "2399-3650"
  ],
  "landing_url": "https://www.nature.com/articles/s42005-026-02861-8",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "3107|Topological Materials and Phenomena"
    ]
  ],
  "openalex": "W7216238022",
  "pdf_url": "https://www.nature.com/articles/s42005-026-02861-8_reference.pdf",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-02",
  "publisher": "Springer Science and Business Media LLC",
  "ris": "https://research.draconitic.com/paper/a6t9y69bvjzke.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:52Z",
      "native_id": "10.1038/s42005-026-02861-8",
      "source": "crossref",
      "url": "https://www.nature.com/articles/s42005-026-02861-8"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3107|Topological Materials and Phenomena",
      "subfield": "amo"
    }
  ],
  "title": "InAsSb surface quantum well with in situ deposited Nb as a platform for hybrid devices",
  "title_text": "InAsSb surface quantum well with in situ deposited Nb as a platform for hybrid devices",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:52Z",
  "url": "https://research.draconitic.com/paper/a6t9y69bvjzke",
  "venue": "Communications Physics",
  "versions": []
}