{
  "abstract": "In experimental studies, increasing the ratio of source gases (C3H8/SiH4; C/Si ratio) for chemical vapor deposition (CVD) causes the growth rate to increase monotonically, and nitrogen incorporation tends to decrease accordingly; however, a unique phenomenon has been observed in which nitrogen incorporation increases discontinuously in the range of C/Si ratio between 1.0 and 1.5. This phenomenon is specific to the vicinal 4H-SiC(000-1) C-face and is not observed on the vicinal 4H-SiC(0001) Si-face. In this study, N incorporation behavior on a vicinal C-face during CVD is investigated using an ab initio-based approach. The calculation results suggest that when C/Si ratio is less than 1.0, the Si-terminated step edge is stable, whereas when C/Si ratio exceeds 1.0, the existence probability of the C-H-terminated step edge, where the N substitution energy is lower than in the former case, increases sharply. This change in the step-edge state across C/Si = 1.0 is thought to be the cause of the discontinuous increase in N incorporation.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.28891",
  "author_total": 6,
  "authors": [
    {
      "name": "Wataru Ota"
    },
    {
      "name": "Akira Kusaba"
    },
    {
      "name": "Yoshihiro Kangawa"
    },
    {
      "name": "Keisuke Kurashima"
    },
    {
      "name": "Ichiro Mizushima"
    },
    {
      "name": "Kenji Shiraishi"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/acd38jqkw6enb.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.28891",
  "fulltext_url": null,
  "id": "acd38jqkw6enb",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.28891",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2208|Silicon Carbide Semiconductor Technologies"
    ]
  ],
  "openalex": "W7214321795",
  "pdf_url": "https://arxiv.org/pdf/2609.28891",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-24",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/acd38jqkw6enb.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:24:11Z",
      "native_id": "2609.28891",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.28891"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Influence of chemical vapor deposition conditions on N incorporation ratio on vicinal 4H-SiC(000-1) surface: Ab Initio-based approach",
  "title_text": "Influence of chemical vapor deposition conditions on N incorporation ratio on vicinal 4H-SiC(000-1) surface: Ab Initio-based approach",
  "type": "preprint",
  "updated_at": "2026-10-30T12:24:11Z",
  "url": "https://research.draconitic.com/paper/acd38jqkw6enb",
  "venue": "arXiv",
  "versions": []
}