{
  "abstract": "Conventional gate-stack scaling reduces dielectric thickness and increases permittivity while largely treating the position and electronic character of the gate-side screening boundary as fixed. Here we show that this boundary can be engineered by converting the surface of the topological insulator Bi\\textsubscript{2}Se\\textsubscript{3} into insulating high-$κ$ BiF\\textsubscript{3}. Position-resolved calculations reveal a gap-opened immediate amorphous-BiF\\textsubscript{3}/crystalline-Bi\\textsubscript{2}Se\\textsubscript{3} interface and a reconstructed gap-closed Bi\\textsubscript{2}Se\\textsubscript{3}-derived state in the adjacent subinterface layer, accompanied by a localized interfacial dipole. Capacitor measurements independently resolve a finite series response consistent with electronic compressibility at this boundary; this response lowers the nominal stack capacitance. Despite this capacitance penalty, MoS\\textsubscript{2} transistors with closely matched BiF\\textsubscript{3} thicknesses and a common BiF\\textsubscript{3}/MoS\\textsubscript{2} channel-side material interface exhibit near-thermionic-limit switching, negligible hysteresis and substantially weaker subthreshold drain-bias dependence than BiF\\textsubscript{3}-only controls. These results identify the position and electronic character of the gate-side screening boundary as additional design variables for transistor electrostatics beyond nominal dielectric capacitance.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.30016",
  "author_total": 28,
  "authors": [
    {
      "name": "Minuk Song"
    },
    {
      "name": "Jiwan Kim"
    },
    {
      "name": "MD Gius Uddin"
    },
    {
      "name": "Wonseok Kim"
    },
    {
      "name": "Jihun Park"
    },
    {
      "name": "Han Uk Lee"
    },
    {
      "name": "Dong Won Jeon"
    },
    {
      "name": "Dohyung Lee"
    },
    {
      "name": "Lide Yao"
    },
    {
      "name": "Jouko Lahtinen"
    },
    {
      "name": "Gyunghyun Jang"
    },
    {
      "name": "Soohyun Min"
    },
    {
      "name": "Yonas Tsegaye Megra"
    },
    {
      "name": "Xiaoqi Cui"
    },
    {
      "name": "Seungwoo Choi"
    },
    {
      "name": "Yunyun Dai"
    },
    {
      "name": "Sang Hoon Chae"
    },
    {
      "name": "Keun Su Kim"
    },
    {
      "name": "Dong-Ho Kang"
    },
    {
      "name": "Hyeon-Jin Shin"
    },
    {
      "name": "Wooseok Song"
    },
    {
      "name": "Seth Ariel Tongay"
    },
    {
      "name": "Chul-Ho Lee"
    },
    {
      "name": "Manish Chhowalla"
    },
    {
      "name": "Sung Beom Cho"
    },
    {
      "name": "Zhipei Sun"
    },
    {
      "name": "Kibog Park"
    },
    {
      "name": "Hoon Hahn Yoon"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/adgb93emtqwt6.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.30016",
  "fulltext_url": null,
  "id": "adgb93emtqwt6",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.30016",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7214278167",
  "pdf_url": "https://arxiv.org/pdf/2609.30016",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-06",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/adgb93emtqwt6.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:27:22Z",
      "native_id": "2609.30016",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.30016"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Topological-Insulator Heterophase Gate Stacks for Transistor Electrostatics",
  "title_text": "Topological-Insulator Heterophase Gate Stacks for Transistor Electrostatics",
  "type": "preprint",
  "updated_at": "2026-10-30T12:27:22Z",
  "url": "https://research.draconitic.com/paper/adgb93emtqwt6",
  "venue": "arXiv",
  "versions": []
}