{
  "abstract": "Atomically thin transition-metal dichalcogenides, such as MoS2, offer a promising route to surpass the scaling limits of silicon owing to their excellent electrostatic control and resilience to short-channel effects. Realizing this potential depends critically on gate-stack engineering, where strong gate coupling must be achieved without compromising the pristine two-dimensional interface. Here, we demonstrate a coplanar lateral-gating architecture for MoS2 field-effect transistors fabricated directly on single-crystal SrTiO3. The exceptionally high permittivity of SrTiO3 enhances gate-channel coupling. The coplanar geometry eliminates the need for a separate gate insulator, reducing interface disorder. Owing to the quantum paraelectric nature, the SrTiO3 dielectric constant increases upon cooling, enhancing the gate coupling, leading to a decrease in threshold voltage and subthreshold swing an effect that contrasts with conventional FET architectures. The dielectric-free MoS2 surface, combined with enhanced electrostatic control, makes this architecture a promising platform for low-power two-dimensional electronics and cryogenic quantum devices.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.20426",
  "author_total": 4,
  "authors": [
    {
      "name": "Prasad Muragesh"
    },
    {
      "name": "Manav Murali"
    },
    {
      "name": "Venkatesha Modur Ramachandra"
    },
    {
      "name": "Madhu Thalakulam"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/ae2hm41df4jvc.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.20426",
  "fulltext_url": null,
  "id": "ae2hm41df4jvc",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.20426",
  "language": null,
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7213578793",
  "pdf_url": "https://arxiv.org/pdf/2609.20426",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-17",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/ae2hm41df4jvc.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:22:19Z",
      "native_id": "2609.20426",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.20426"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices",
  "title_text": "Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices",
  "type": "preprint",
  "updated_at": "2026-10-30T12:22:19Z",
  "url": "https://research.draconitic.com/paper/ae2hm41df4jvc",
  "venue": "arXiv",
  "versions": []
}