{
  "abstract": "Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer a promising pathway for next-generation electronics due to their exceptional electrical characteristics at atomically thin thickness. Nevertheless, the realization of high-quality p-type 2D-FETs remains a significant challenge for CMOS device integration due to surface damage and unintended n-doping induced during dielectric deposition. In this work, we report the wafer-scale synthesis of p-type WSe 2 films using metal-organic chemical vapor deposition and the fabrication of top-gate p-FETs through a buffer layer strategy, which provides superior electrostatic control and channel stability. The transistors exhibit excellent p-type performance, achieving a hole mobility of 10.49 ± 2.35 cm 2 V −1 s −1 with on/off current ratio exceeding 10 9 . By leveraging the process’s scalability, which ensures uniform and damage-free fabrication, we successfully produced reliable wafer-scale PMOS logic circuits. This study provides a scalable, damage-free integration solution for 2D electronics, paving the way for the practical realization of all 2D-based high-density electronics and circuits.",
  "abstract_shown": true,
  "affiliations": [
    "School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea."
  ],
  "article_type": null,
  "arxiv": null,
  "author_total": 9,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Jonggyu Choi",
      "orcid": "0009-0008-5015-1225"
    },
    {
      "affs": [
        0
      ],
      "name": "Hayoung Kim",
      "orcid": "0009-0000-7638-4432"
    },
    {
      "affs": [
        0
      ],
      "name": "Seungsoo Kim",
      "orcid": "0009-0004-7051-9016"
    },
    {
      "affs": [
        0
      ],
      "name": "Mingyu Kim",
      "orcid": "0009-0008-6028-4697"
    },
    {
      "affs": [
        0
      ],
      "name": "Seungmin Yang"
    },
    {
      "affs": [
        0
      ],
      "name": "Juyeong Hong",
      "orcid": "0000-0001-6525-9783"
    },
    {
      "affs": [
        0
      ],
      "name": "Seokmin Yun",
      "orcid": "0009-0000-8887-8157"
    },
    {
      "affs": [
        0
      ],
      "name": "Ajit K. Katiyar",
      "orcid": "0000-0003-1988-0290"
    },
    {
      "affs": [
        0
      ],
      "name": "Jong-Hyun Ahn",
      "orcid": "0000-0002-8135-7719"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/aftsqpd8d0q3c.bib",
  "cited_by": 0,
  "doi": "10.1126/sciadv.aef4354",
  "fulltext_url": null,
  "id": "aftsqpd8d0q3c",
  "issns": [
    "2375-2548"
  ],
  "landing_url": "https://www.science.org/doi/10.1126/sciadv.aef4354",
  "language": null,
  "licence": "CC-BY-NC",
  "licence_label": "CC BY-NC",
  "licence_source": "journal",
  "licence_url": "https://creativecommons.org/licenses/by-nc/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7220832884",
  "pdf_url": null,
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-09",
  "publisher": "American Association for the Advancement of Science (AAAS)",
  "ris": "https://research.draconitic.com/paper/aftsqpd8d0q3c.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:41Z",
      "native_id": "10.1126/sciadv.aef4354",
      "source": "crossref",
      "url": "https://www.science.org/doi/10.1126/sciadv.aef4354"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "openalex:2505|2D Materials and Applications",
      "subfield": "materials-polymers"
    }
  ],
  "title": "Wafer-scale synthesis of WSe ₂ for high-performance p-type top-gated transistors and logic circuits",
  "title_text": "Wafer-scale synthesis of WSe ₂ for high-performance p-type top-gated transistors and logic circuits",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:41Z",
  "url": "https://research.draconitic.com/paper/aftsqpd8d0q3c",
  "venue": "Science Advances",
  "versions": []
}