{
  "abstract": "Optically reconfigurable dielectrics represent an emerging route toward low‐power, spatially addressable neuromorphic elements, yet materials capable of exhibiting stable and broadly tunable photo‐induced plasticity remain scarce. Here we report that Zn‐substituted BaAl2O4, a wide‐bandgap aluminate, hosts an unusual form of light‐controlled dielectric modulation whose magnitude and retention can be programmably engineered. Below‐bandgap excitation at 3.4 eV produces a substantial and long‐lasting increase in permittivity with negligible electronic conduction, revealing a photo‐dielectric state that can be thermally released on demand. The response amplitude is continuously adjustable across six decades through excitation intensity, enabling analog, synapse‐like plasticity within a single inorganic phase. By identifying the microscopic origin of this persistent photo‐dielectric phenomenon, we establish wide‐bandgap aluminates as a materials platform where optical excitation directly manipulates dielectric functionality. This capability provides a route to neuromorphic architectures in which learning operations are executed via photo irradiation, opening new opportunities for photoelectronic information processing.",
  "abstract_shown": true,
  "affiliations": [
    "Department of Physics Nagoya University Nagoya Japan",
    "Nanostructures Research Laboratory Japan Fine Ceramics Center Nagoya Japan",
    "Faculty of Science Yamagata University Yamagata Japan"
  ],
  "article_type": null,
  "arxiv": null,
  "author_total": 5,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Masashi Sugino"
    },
    {
      "affs": [
        1
      ],
      "name": "Akihide Kuwabara"
    },
    {
      "affs": [
        2
      ],
      "name": "Mamoru Kitaura"
    },
    {
      "affs": [
        0
      ],
      "name": "Kazuhiko Deguchi"
    },
    {
      "affs": [
        0
      ],
      "name": "Hiroki Taniguchi"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/av8edrrswp6e6.bib",
  "cited_by": 0,
  "doi": "10.1002/aelm.70613",
  "fulltext_url": "https://doi.org/10.1002/aelm.70613",
  "id": "av8edrrswp6e6",
  "issns": [
    "2199-160X"
  ],
  "landing_url": "https://doi.org/10.1002/aelm.70613",
  "language": "en",
  "licence": "CC-BY",
  "licence_label": "CC BY",
  "licence_source": "journal",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "lcc",
      "QC1-999"
    ],
    [
      "lcc",
      "TK452-454.4"
    ],
    [
      "openalex",
      "2208|Advanced Memory and Neural Computing"
    ]
  ],
  "openalex": "W7221153663",
  "pdf_url": "https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.70613",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-26",
  "publisher": "Wiley-VCH",
  "ris": "https://research.draconitic.com/paper/av8edrrswp6e6.ris",
  "sources": [
    {
      "first_seen": "2026-10-31T14:21:41Z",
      "native_id": "0436e1c36e034a3c834cf60f64a2a2e9",
      "source": "doaj",
      "url": "https://doi.org/10.1002/aelm.70613"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "lcc:QC1-999",
      "subfield": "general"
    }
  ],
  "title": "Photo‐Dielectric Synaptic Plasticity in Zn‐Doped BaAl2O4",
  "title_text": "Photo‐Dielectric Synaptic Plasticity in Zn‐Doped BaAl2O4",
  "type": "peer-reviewed",
  "updated_at": "2026-10-31T14:21:41Z",
  "url": "https://research.draconitic.com/paper/av8edrrswp6e6",
  "venue": "Advanced Electronic Materials",
  "versions": []
}