{
  "abstract": "LiGa5O8 is an ultrawide-bandgap oxide semiconductor that has recently been experimentally demonstrated to exhibit p-type conductivity; however, the origin of the observed p-type transport remains poorly understood. In this work, we investigate the origin of p-type conductivity by systematically comparing the electrical, compositional, and structural properties of mist chemical vapor deposition (mist-CVD) grown LiGa5O8 thin films exhibiting either p-type conductivity or insulating behavior under different growth conditions. The p-conductive films exhibit room-temperature hole concentrations on the order of 10^18 cm^-3. The emergence of p-type conductivity is found to be strongly correlated with the elemental composition of the films, with X-ray photoelectron spectroscopy (XPS) revealing a reduced Li/Ga ratio in the p-conductive films, indicative of a Li-deficient composition. Raman spectroscopy and X-ray diffraction (XRD) further reveal signatures of \\b{eta}-Ga2O3 in the p-conductive films that are absent in the insulating films, demonstrating the formation of a secondary \\b{eta}-Ga2O3 phase. Considering the reported type-II band alignment between LiGa5O8 and \\b{eta}-Ga2O3, together with theoretically predicted acceptor levels associated Li vacancies (V_Li) in LiGa5O8, the formation of mixed LiGa5O8/\\b{eta}-Ga2O3 phases is proposed to facilitate electron transfer from the \\b{eta}-Ga2O3 valence band to acceptor states in LiGa5O8, thereby promoting hole accumulation and p-type conductivity.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.10401",
  "author_total": 10,
  "authors": [
    {
      "name": "Dong Su Yu"
    },
    {
      "name": "Shashu Tomar"
    },
    {
      "name": "Zixiu Huang"
    },
    {
      "name": "Kaitian Zhang"
    },
    {
      "name": "Sarker Md. Sadman"
    },
    {
      "name": "Vijay Gopal Thirupakuzi Vangipuram"
    },
    {
      "name": "Ye Lin"
    },
    {
      "name": "Walter R. L. Lambrecht"
    },
    {
      "name": "Roberto C. Myers"
    },
    {
      "name": "Hongping Zhao"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/aw5ehpjcc5sjz.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.10401",
  "fulltext_url": null,
  "id": "aw5ehpjcc5sjz",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.10401",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2504|Ga2O3 and related materials"
    ]
  ],
  "openalex": "W7221032622",
  "pdf_url": "https://arxiv.org/pdf/2610.10401",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-07",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/aw5ehpjcc5sjz.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:27:37Z",
      "native_id": "2610.10401",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.10401"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Interface Doping Mechanism of p-Type Conductivity in Mist-CVD-Grown LiGa5O8 Thin Films",
  "title_text": "Interface Doping Mechanism of p-Type Conductivity in Mist-CVD-Grown LiGa5O8 Thin Films",
  "type": "preprint",
  "updated_at": "2026-10-30T12:27:37Z",
  "url": "https://research.draconitic.com/paper/aw5ehpjcc5sjz",
  "venue": "arXiv",
  "versions": []
}