{
  "abstract": "The development of high-performance p-type oxide semiconductors is essential for realizing complementary logic for monolithic 3D integration, yet p-type oxide semiconductors still exhibit substantially inferior performance compared with their n-type counterparts. In this work, we demonstrate high-performance p-type SnOx transistors by atomic layer deposition (ALD), as back-end-of-line compatible devices for monolithic 3D integration. The SnOx transistors exhibit high field-effect mobility of 6.9 cm2/Vs, low subthreshold swing (SS) of 185 mV/dec, decent on/off ratio (ION/IOFF) of 1.8*104 and high bias stability. By scaling the channel length down to 80 nm, a high on-current of 38.7 mA/mm at VDS of -1 V is achieved. It is understood that precursor and reaction engineering to suppress Sn4+ component in SnOx film are the key for performance enhancement. Furthermore, a complementary field-effect transistor with ALD SnOx p-FET vertically stacking on ALD In2O3 n-FET is also demonstrated, achieving maximum voltage gain of 21 V/V at VDD of 4 V. These findings suggest ALD SnOx as a promising candidate for scaled high-performance BEOL p-type transistors.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.11114",
  "author_total": 11,
  "authors": [
    {
      "name": "Ziheng Wang"
    },
    {
      "name": "Wen He"
    },
    {
      "name": "Chen Gu"
    },
    {
      "name": "Kai Jiang"
    },
    {
      "name": "Liankai Zheng"
    },
    {
      "name": "Jinxiu Zhao"
    },
    {
      "name": "Zhiyu Lin"
    },
    {
      "name": "Xiangjun Liu"
    },
    {
      "name": "Di Geng"
    },
    {
      "name": "Ling Li"
    },
    {
      "name": "Mengwei Si"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/ay0a031687bd3.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.11114",
  "fulltext_url": null,
  "id": "ay0a031687bd3",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.11114",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2208|Semiconductor materials and devices"
    ]
  ],
  "openalex": "W7212293177",
  "pdf_url": "https://arxiv.org/pdf/2609.11114",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-10",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/ay0a031687bd3.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:20:26Z",
      "native_id": "2609.11114",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.11114"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration",
  "title_text": "High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration",
  "type": "preprint",
  "updated_at": "2026-10-30T12:20:26Z",
  "url": "https://research.draconitic.com/paper/ay0a031687bd3",
  "venue": "arXiv",
  "versions": []
}