{
  "abstract": "Strain engineering is a leading route to control valley-selective transport in monolayer transition metal dichalcogenides. Whether this quantum effect survives inside a fully contacted device remains an open question. Quantum transport models capture the underlying valley deflection but are limited to isolated nanoscale fragments, leaving it unclear if a full device registers strain-induced valley sorting in the bulk, at the contacts, or at all. Here, the quantum valley-deflection tensor of strained monolayer MoS$_2$ is embedded directly into a macroscopic Poisson-drift-diffusion model, extending this physics to a complete, contact-inclusive device. Applying this framework to a 300~nm monolayer MoS$_2$ transistor with a 3~nm HfO$_2$ gate dielectric at 77~K, under a localized 6.14~T pseudo-magnetic strain field, shows the resulting 63.6\\% suppression of the ON-state current is not a bulk property. It is set almost entirely by the source and drain metal-semiconductor interfaces. The full suppression is reproduced when only the 15~nm contact regions are strained and nearly vanishes when the channel interior alone is strained, identifying the metal contact as the dominant site of strain-induced valley physics. Observing it requires tunneling-transparent, degenerately-doped contacts, since classical Ohmic barriers overwhelm the topological signal. A transmission-line analysis reduces this behavior to a single valley-topological contact resistance ($R_{c,V}$) and a predictive inverse-length scaling law. This framework applies to any strain-engineered 2D-material heterostructure and can be tested with standard multi-length contact structures. Ultimately, these results identify the metal-semiconductor interface as the decisive location for engineering and detecting valley-selective transport in real 2D-material devices.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.07203",
  "author_total": 1,
  "authors": [
    {
      "name": "Suhas Suresh Bharadwaj"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/b2wcx2y5x0pac.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.07203",
  "fulltext_url": null,
  "id": "b2wcx2y5x0pac",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.07203",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7220907771",
  "pdf_url": "https://arxiv.org/pdf/2610.07203",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-05",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/b2wcx2y5x0pac.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:27:22Z",
      "native_id": "2610.07203",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.07203"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Contact-Governed Macroscopic Signatures of Strain-Induced Valley Sorting in MoS$_2$ Field-Effect Transistors",
  "title_text": "Contact-Governed Macroscopic Signatures of Strain-Induced Valley Sorting in MoS_2 Field-Effect Transistors",
  "type": "preprint",
  "updated_at": "2026-10-30T12:27:22Z",
  "url": "https://research.draconitic.com/paper/b2wcx2y5x0pac",
  "venue": "arXiv",
  "versions": []
}