{
  "abstract": "$β$-Ga$_2$O$_3$ photoconductive semiconductor switches (PCSSs) are attractive for high-voltage operation, but above-bandgap triggering requires deep-ultraviolet excitation. Here, we investigate a 650-um-thick, 0.01% Fe-doped $β$-Ga$_2$O$_3$ impurity PCSS with a 5-mm lateral gap under continuous-wave (CW) 808-nm sub-bandgap excitation at biases up to 10 kV ( 20 kV cm^-1). The device exhibited clear sub-bandgap photoconductive switching. As the optical power density increased from 0.64 to 3.18 W cm^-2, the ON-state current increased progressively while the ON-state resistance decreased, consistent with enhanced defect-assisted photocarrier generation. A higher applied bias further strengthened the switching response through enhanced field-assisted carrier transport. The ON/OFF ratio increases with optical power density but exhibits a nonmonotonic bias dependence, reaching approximately 15-16 near 5-7 kV. At 10 kV, increased OFF-state conduction and non-ideal transient behavior reduce the switching contrast. These results demonstrate near-infrared photoconductive switching but also highlight critical trade-offs in photoconductive thresholds for impurity states.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.41049",
  "author_total": 8,
  "authors": [
    {
      "name": "Imteaz Rahaman"
    },
    {
      "name": "Hunter Ellis"
    },
    {
      "name": "Afrouz Taherian"
    },
    {
      "name": "Seyedeh Shadi Mirmohammadi"
    },
    {
      "name": "Botong Li"
    },
    {
      "name": "Berardi Sensale Rodriguez"
    },
    {
      "name": "Michael A. Scarpulla"
    },
    {
      "name": "Kai Fu"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/b4at5hh5rez3e.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.41049",
  "fulltext_url": null,
  "id": "b4at5hh5rez3e",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.41049",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.41049",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-29",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/b4at5hh5rez3e.ris",
  "sources": [
    {
      "first_seen": "2026-11-02T12:21:15Z",
      "native_id": "2610.41049",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.41049"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "10 kV $β$-Ga$_2$O$_3$ Sub-Bandgap Triggered Impurity Photoconductive Semiconductor Switches (i-PCSSs): Lessons for Optimal Design",
  "title_text": "10 kV β-Ga_2O_3 Sub-Bandgap Triggered Impurity Photoconductive Semiconductor Switches (i-PCSSs): Lessons for Optimal Design",
  "type": "preprint",
  "updated_at": "2026-11-04T15:20:51Z",
  "url": "https://research.draconitic.com/paper/b4at5hh5rez3e",
  "venue": "arXiv",
  "versions": []
}