{
  "abstract": "Germanium (Ge) thin films were deposited by electron chemical vapor deposition (e-CVD) using bis(1,3-di-tert-butyltriazenide)germanium(II), Ge(triaz)2, and plasma electrons. Separating the Ge(triaz)2 pulse and electron exposure into sequential steps affords a controllable cyclic deposition process in which both precursor adsorption and electron exposure exhibited the self-limiting behavior characteristic of atomic layer deposition (ALD) process. 50 deposition cycles resulted in a continuous film with a thickness of 16 nm. The films were oxidized after exposure to air and low concentrations of carbon and nitrogen impurities were detected after Ar+ etching. The plasma decomposition of Ge(triaz)2 is found to render dinitrogen and volatile hydrocarbon fragments, explaining the low impurity levels of the deposited films.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 7,
  "authors": [
    {
      "name": "Peggy Bagherzadeh Tabrizi"
    },
    {
      "name": "Nathan J. O'Brien"
    },
    {
      "name": "Alaa Malekshahineia"
    },
    {
      "name": "Robert Boyd"
    },
    {
      "name": "Grzegorz Greczynski"
    },
    {
      "name": "Daniel Lundin"
    },
    {
      "name": "Henrik Pedersen",
      "orcid": "0000-0002-7171-5383"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/b4vgcrscwzt1e.bib",
  "cited_by": 0,
  "doi": "10.26434/chemrxiv.15010383/v1",
  "fulltext_url": null,
  "id": "b4vgcrscwzt1e",
  "issns": [],
  "landing_url": "https://chemrxiv.org/doi/full/10.26434/chemrxiv.15010383/v1",
  "language": null,
  "licence": "CC-BY",
  "licence_label": "CC BY",
  "licence_source": "journal",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "2208|Semiconductor materials and devices"
    ]
  ],
  "openalex": "W7221605774",
  "pdf_url": "https://chemrxiv.org/doi/pdf/10.26434/chemrxiv.15010383/v1",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-13",
  "publisher": "American Chemical Society (ACS)",
  "ris": "https://research.draconitic.com/paper/b4vgcrscwzt1e.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:24Z",
      "native_id": "10.26434/chemrxiv.15010383",
      "source": "chemrxiv",
      "url": "https://chemrxiv.org/doi/full/10.26434/chemrxiv.15010383/v1"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "source:chemrxiv",
      "subfield": "general"
    }
  ],
  "title": "Atomic layer deposition of germanium using a germanium(II) triazenide precursor and plasma electrons",
  "title_text": "Atomic layer deposition of germanium using a germanium(II) triazenide precursor and plasma electrons",
  "type": "preprint",
  "updated_at": "2026-10-30T12:17:24Z",
  "url": "https://research.draconitic.com/paper/b4vgcrscwzt1e",
  "venue": "ChemRxiv",
  "versions": []
}