{
  "abstract": "Charge-transfer doping provides a nondestructive route to tune two-dimensional transition-metal dichalcogenides (TMDs), but selectively patterned n-type dopants effective across different TMD channels remain limited. Here, ultrathin bismuth oxide (BiO x ) is used as an n-type charge-transfer doping and passivation layer for monolayer MoS2 and WSe2 transistors. In MoS2, 2 nm BiO x preserves the channel structure and yields a TLM-extracted effective contact resistance of 0.71 ± 0.06 kΩ·μm at n2D = 1.8 × 1013 cm–2. Thicker BiO x strengthens n-type modulation but reduces gate controllability. The modulation remains stable after ambient storage and air annealing. BiO x also enhances electron transport in WSe2 and enables homogeneous WSe2 inverters with MoO x -doped p-FETs, achieving a gain of ∼19 and a total normalized noise margin of 0.895 VDD at VDD = 2 V. These results establish BiO x as a cross-TMD n-type charge-transfer dopant for contact, threshold-voltage, and polarity engineering.",
  "abstract_shown": true,
  "affiliations": [
    "Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan",
    "Graduate School of Advanced Technology, National Taiwan University, Taipei 106, Taiwan"
  ],
  "article_type": "research article",
  "arxiv": null,
  "author_total": 7,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Ching-Hao Hsu",
      "orcid": "0009-0007-2928-5555"
    },
    {
      "affs": [
        1
      ],
      "name": "Yu-Wei Hsu",
      "orcid": "0009-0002-1510-5975"
    },
    {
      "affs": [
        0
      ],
      "name": "Ta-Wei Hsu"
    },
    {
      "affs": [
        0
      ],
      "name": "Yu-Tung Lin"
    },
    {
      "affs": [
        0
      ],
      "name": "Li-Ya Chiu"
    },
    {
      "affs": [
        0
      ],
      "name": "I-Chih Ni"
    },
    {
      "affs": [
        0
      ],
      "name": "Chih-I Wu",
      "orcid": "0000-0003-3613-7511"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/baccv9knjm09w.bib",
  "cited_by": 0,
  "doi": "10.1021/acs.nanolett.6c03585",
  "fulltext_url": "https://pmc.ncbi.nlm.nih.gov/articles/PMC13721172/",
  "id": "baccv9knjm09w",
  "issns": [
    "1530-6984",
    "1530-6992"
  ],
  "landing_url": "https://doi.org/10.1021/acs.nanolett.6c03585",
  "language": "en",
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "heading",
      "Letter"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7222933543",
  "pdf_url": null,
  "pmcid": "PMC13721172",
  "pmid": "42949399",
  "published": "2026-10-19",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/baccv9knjm09w.ris",
  "sources": [
    {
      "first_seen": "2026-11-03T12:21:54Z",
      "native_id": "PMC13721172",
      "source": "pmc",
      "url": "https://doi.org/10.1021/acs.nanolett.6c03585"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "openalex:2505|2D Materials and Applications",
      "subfield": "materials-polymers"
    }
  ],
  "title": "Ultrathin BiO x Charge-Transfer Doping for Cross-TMD Electronic Modulation and Homogeneous WSe2 Inverters",
  "title_text": "Ultrathin BiO x Charge-Transfer Doping for Cross-TMD Electronic Modulation and Homogeneous WSe2 Inverters",
  "type": "peer-reviewed",
  "updated_at": "2026-11-03T12:21:54Z",
  "url": "https://research.draconitic.com/paper/baccv9knjm09w",
  "venue": "Nano Letters",
  "versions": []
}