{
  "abstract": "We demonstrate a monolithic telecom C-band single-photon platform based on low-density InAs/InP quantum dots grown on an InGaAsP/InP distributed Bragg reflector, with simulated upward light-extraction efficiency exceeding 10% within the 40 nm spectral band. Enhanced light extraction is crucial for wide-field photoluminescence imaging, enabling approximately 3 nm statistical centroid-localization precision of QD emitters due to improved signal-to-noise ratio. The identified charged exciton emitting at 1549.5 nm exhibits single-photon emission purity up to 94.7%, validated by a raw peak-area integration under pulsed quasi-resonant excitation. Under these conditions, photons emitted sequentially from the unprocessed planar structure reveal a raw two-photon interference visibility of 51% of the photon wave packet within the 2 ns time window and 41% over a 4 ns integration window, all without Purcell enhancement typical for cavity-embedded emitters. Combining broadband extraction, high photon coherence, and emitter preselection on a native III-V wafer, this architecture paves the way for marker-based deterministic fabrication of high-quality monolithic nanophotonic devices.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.30905",
  "author_total": 8,
  "authors": [
    {
      "name": "Paweł Mrowiński"
    },
    {
      "name": "Jan Śmigiel"
    },
    {
      "name": "Mikołaj Badura"
    },
    {
      "name": "Beata Ściana"
    },
    {
      "name": "Wojciech Kijaszek"
    },
    {
      "name": "Emilia Zięba-Ostój"
    },
    {
      "name": "Paweł Holewa"
    },
    {
      "name": "Marcin Syperek"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/bdek9jtgh7k8t.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.30905",
  "fulltext_url": null,
  "id": "bdek9jtgh7k8t",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.30905",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "openalex",
      "3107|Semiconductor Quantum Structures and Devices"
    ]
  ],
  "openalex": "W7223359329",
  "pdf_url": "https://arxiv.org/pdf/2610.30905",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-22",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/bdek9jtgh7k8t.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:34:34Z",
      "native_id": "2610.30905",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.30905"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Broadband emitter localization and prefabrication two-photon interference from InAs/InP quantum dots monolithically grown on an InGaAsP/InP distributed Bragg reflector",
  "title_text": "Broadband emitter localization and prefabrication two-photon interference from InAs/InP quantum dots monolithically grown on an InGaAsP/InP distributed Bragg reflector",
  "type": "preprint",
  "updated_at": "2026-10-30T12:34:34Z",
  "url": "https://research.draconitic.com/paper/bdek9jtgh7k8t",
  "venue": "arXiv",
  "versions": []
}