{
  "abstract": "Germanium-tin (GeSn) alloys have strong potential for Si-based mid-infrared (MIR) photonics, owing to their composition-dependent tunable bandgap. Although two-dimensional materials such as PtTe₂, MoTe₂, and Bi₂O₂Se exhibit excellent MIR optical properties, GeSn offers the unique advantages of CMOS compatibility, wafer-scale epitaxial growth, and direct monolithic integration with silicon photonic platforms. However, the huge lattice mismatch between GeSn and Si, induces compressive strain and generates crystalline defects that deteriorate device performance. To address these challenges, we develop a Sn-composition-graded epitaxial growth approach to obtain high-Sn-content (~9.1 %), strain-relaxed GeSn films on Si via molecular beam epitaxy (MBE). The grown graded GeSn films exhibit a strain relaxation degree of 31.4%. Subsequently, we demonstrated a GeSn metal semiconductor metal (MSM) photodetector (PD), exhibiting the peak responsivity of value 0.55 A/W at λ=1200 nm and 0.022 A/W at cutoff wavelength of λ=2400 nm under an applied bias of 10 V, confirming the material's suitability for broadband MIR detection.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 12,
  "authors": [
    {
      "name": "Kuo-Chih Lee"
    },
    {
      "name": "Ping-Chien Hsieh"
    },
    {
      "name": "Yue-Tong Jheng"
    },
    {
      "name": "Radhika Bansal"
    },
    {
      "name": "Yu Cheng"
    },
    {
      "name": "Yoshishige Tsuchiya"
    },
    {
      "name": "Jun-Yu Ou"
    },
    {
      "name": "Xin Zhou"
    },
    {
      "name": "Pavels Onufrijevs"
    },
    {
      "name": "Alexander Fedorchenko"
    },
    {
      "name": "H H Cheng"
    },
    {
      "name": "Guo-En Chang"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/bdvsmze5vq1cp.bib",
  "cited_by": 0,
  "doi": "10.1016/j.optmat.2026.118509",
  "fulltext_url": null,
  "id": "bdvsmze5vq1cp",
  "issns": [
    "0925-3467",
    "1873-1252"
  ],
  "landing_url": "https://hal.science/hal-05765483v1",
  "language": "en",
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.phys"
    ],
    [
      "hal",
      "0.spi"
    ],
    [
      "openalex",
      "2208|Advanced Semiconductor Detectors and Materials"
    ]
  ],
  "openalex": "W7213615073",
  "pdf_url": "https://hal.science/hal-05765483/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-19",
  "publisher": "Elsevier",
  "ris": "https://research.draconitic.com/paper/bdvsmze5vq1cp.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:41Z",
      "native_id": "hal-05765483",
      "source": "hal",
      "url": "https://hal.science/hal-05765483v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "hal:0.phys",
      "subfield": "general"
    }
  ],
  "title": "Epitaxial growth of strain-relaxed GeSn alloys on Si utilizing Sn-composition-graded buffer layer for mid-infrared photodetectors",
  "title_text": "Epitaxial growth of strain-relaxed GeSn alloys on Si utilizing Sn-composition-graded buffer layer for mid-infrared photodetectors",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:41Z",
  "url": "https://research.draconitic.com/paper/bdvsmze5vq1cp",
  "venue": "Optical Materials",
  "versions": []
}