{
  "abstract": "The development of power electronic converters operating at cryogenic temperatures is limited by the lack of data on electronic components outside the standard temperature range specified by manufacturers (typically above −65°C, i.e., 208 K). To fill this gap, the construction of an open access database of power electronic component characteristics at cryogenic temperatures is presented. As a first step, the focus is on the electrical characterisation of power diodes at both room (293 K) and liquid nitrogen (77 K) temperatures. We present a tailored experimental protocol that allows their I–V characteristics to be obtained in a reproducible manner at both temperatures. Additionally, we share the results obtained for more than 60 power diodes, having nominal current from a few amperes to several thousand amperes. We also analyse the variability among same‐reference diodes and the impact of repeated thermal cycling on a given diode. Finally, we demonstrate the practical usefulness of such database through a case study. We predict the performance (losses, efficiency) of a 1 kW single‐phase diode rectifier at 77 K using only the I–V characteristics of the diode from the database, and we show that it matches the performance experimentally measured on the corresponding prototype.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 7,
  "authors": [
    {
      "name": "Yasmine Baazizi"
    },
    {
      "name": "Ana Luiza Haas Bezerra"
    },
    {
      "name": "Alma Lemansour"
    },
    {
      "name": "Lauro Ferreira"
    },
    {
      "name": "Simon Meunier"
    },
    {
      "name": "Tanguy Phulpin"
    },
    {
      "name": "Loïc Quéval"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/bkcewv6tpnkan.bib",
  "cited_by": 0,
  "doi": "10.1049/elp2.70178",
  "fulltext_url": null,
  "id": "bkcewv6tpnkan",
  "issns": [
    "1751-8660"
  ],
  "landing_url": "https://hal.science/hal-05844458v1",
  "language": "en",
  "licence": "CC-BY",
  "licence_label": "CC BY",
  "licence_source": "journal",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.phys"
    ],
    [
      "hal",
      "0.spi"
    ],
    [
      "hal",
      "1.phys.cond"
    ],
    [
      "hal",
      "1.spi.elec"
    ],
    [
      "hal",
      "1.spi.nrj"
    ],
    [
      "hal",
      "2.phys.cond.cm-s"
    ],
    [
      "openalex",
      "2208|Silicon Carbide Semiconductor Technologies"
    ]
  ],
  "openalex": "W7164666198",
  "pdf_url": null,
  "pmcid": null,
  "pmid": null,
  "published": "2026-06-13",
  "publisher": "Institution of Engineering and Technology",
  "ris": "https://research.draconitic.com/paper/bkcewv6tpnkan.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:18:03Z",
      "native_id": "hal-05844458",
      "source": "hal",
      "url": "https://hal.science/hal-05844458v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "hal:1.phys.cond",
      "subfield": "condensed-matter"
    }
  ],
  "title": "An Open Access Database of Power Diode Characteristics at Cryogenic Temperature",
  "title_text": "An Open Access Database of Power Diode Characteristics at Cryogenic Temperature",
  "type": "peer-reviewed",
  "updated_at": "2026-10-31T12:20:56Z",
  "url": "https://research.draconitic.com/paper/bkcewv6tpnkan",
  "venue": "IET Electric Power Applications",
  "versions": []
}