{
  "abstract": "Ferroelectric materials are highly attractive for low-power, high-speed electronics and emerging neuromorphic computing architectures. However, the severe physical scaling limits of conventional bulk (3D) ferroelectrics at the nanoscale have shifted attention towards two-dimensional (2D) ferroelectric monolayers. Accurate device-level performance predictions are essential to accelerate the experimental testing and screening of these novel materials. In this work, we present a multiscale simulation framework that bridges first-principles density functional theory with Non-Equilibrium Green's Function (NEGF) transport calculations. Using a 2D Indium Phosphide monolayer as a case study, our approach leverages a continuously interpolated, polarization-dependent Hamiltonian embedded within a self-consistent Poisson-NEGF solver. The model captures the dynamic interplay between ion movement and electronic transport, naturally reproducing macroscopic hysteresis loops and memory windows without empirical parameters. This predictive pipeline provides a computationally efficient tool to evaluate and optimize next-generation 2D ferroelectric field-effect transistors.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.37823",
  "author_total": 4,
  "authors": [
    {
      "name": "Alejandro Toral-Lopez"
    },
    {
      "name": "Michele Virgilio"
    },
    {
      "name": "Gianluca Fiori"
    },
    {
      "name": "Damiano Marian"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/bqxge1fd5e1mb.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.37823",
  "fulltext_url": null,
  "id": "bqxge1fd5e1mb",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.37823",
  "language": null,
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2208|Ferroelectric and Negative Capacitance Devices"
    ]
  ],
  "openalex": "W7214939437",
  "pdf_url": "https://arxiv.org/pdf/2609.37823",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-29",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/bqxge1fd5e1mb.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:25:31Z",
      "native_id": "2609.37823",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.37823"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Multiscale modelling of nanoscaled FETs based on 2D ferroelectric materials",
  "title_text": "Multiscale modelling of nanoscaled FETs based on 2D ferroelectric materials",
  "type": "preprint",
  "updated_at": "2026-10-30T12:25:31Z",
  "url": "https://research.draconitic.com/paper/bqxge1fd5e1mb",
  "venue": "arXiv",
  "versions": []
}