{
  "abstract": "HfO$_2$-based ferroelectric tunnel junctions (FTJs) are promising candidates for scalable non-volatile memory, but simultaneously achieving a high tunneling electro-resistance ratio (TER) and a low resistance-area (RA) product remains challenging. To address this challenge, this work introduces non-uniform quantum well (QW) and barrier thickness engineering in HfO$_2$-based multi-QW FTJs using a self-consistent Preisach-based ferroelectric (FE) model integrated with the coherent and inelastic non-equilibrium Green's function (NEGF) formalism. The non-uniform well and barrier configuration produces a wide range of FTJ design landscapes due to closely spaced, broad resonant states in the low resistance state (LRS) and a larger separation in the high resistance state (HRS), resulting in strong polarization-dependent resonant transmission with TER reaching the order of $\\mathbf{1\\times10^{8}\\%}$ and an LRS RA product as low as $\\mathbf{1~Ω\\cdot\\mathrm{cm}^{2}}$ at read bias and in the presence of scattering. By incorporating self-consistent elastic scattering into the NEGF framework, we also show that elastic scattering can positively influence the TER and RA performance of non-uniform FTJs by progressively increasing the overlap of the closely spaced resonances. Overall, the results establish non-uniform QW and barrier thickness as an effective and robust design parameter for controlling resonant-state alignment and achieving a favorable combination of high TER and low RA in HfO$_2$-based multi-QW FTJs.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.31411",
  "author_total": 4,
  "authors": [
    {
      "name": "Balram Khattar"
    },
    {
      "name": "Adarsh Tripathi"
    },
    {
      "name": "Manish Anand"
    },
    {
      "name": "Abhishek Sharma"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/bsrv1y8stb3p0.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.31411",
  "fulltext_url": null,
  "id": "bsrv1y8stb3p0",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.31411",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.other"
    ],
    [
      "openalex",
      "2208|Ferroelectric and Negative Capacitance Devices"
    ]
  ],
  "openalex": "W7214645483",
  "pdf_url": "https://arxiv.org/pdf/2609.31411",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-25",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/bsrv1y8stb3p0.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:24:52Z",
      "native_id": "2609.31411",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.31411"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.other",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Non-Uniform Quantum Well and Barrier Thickness Engineering for Robust Ultra-High TER and Low RA Ferroelectric Tunnel Junctions",
  "title_text": "Non-Uniform Quantum Well and Barrier Thickness Engineering for Robust Ultra-High TER and Low RA Ferroelectric Tunnel Junctions",
  "type": "preprint",
  "updated_at": "2026-10-30T12:24:52Z",
  "url": "https://research.draconitic.com/paper/bsrv1y8stb3p0",
  "venue": "arXiv",
  "versions": []
}