{
  "abstract": "We report kilovolt-class vertical (011) \\b{eta}-Ga2O3 Schottky diodes utilizing high-permittivity dielectric TiO2/Al2O3 field-plate for high voltage and high temperature applications. A systematic study was performed with Pt/(011) \\b{eta}-Ga2O3 Schottky barrier diodes (SBDs) with varied diameters from 100 μm to 300 μm, for both with and without field-plate, that revealed excellent consistency of reverse blocking performance regardless of diode area. The field-plate SBDs achieved superior breakdown voltages (3.90 - 4.16 kV) compared to the diodes without field-plate (3.06 - 3.16 kV) owing to effective edge termination. Furthermore, we explored high-temperature performance of the field-plate (011) \\b{eta}-Ga2O3 diodes that revealed excellent forward conduction properties and high rectification ratio (~10^9) throughout the temperature range (25 - 150 C). At reverse bias, the field-plate diodes also exhibited kV-range breakdown voltage with no evident increase in leakage current up to the explored elevated temperature of 150 C. The low area-dependence of breakdown voltage, excellent forward transport properties, and minimal reverse leakage at both high-voltage and elevated temperature demonstrate the exciting potential of (011) \\b{eta}-Ga2O3 SBDs in high-temperature power switches. Thus, our work demonstrates the strategy of advancing the performance of vertical \\b{eta}-Ga2O3 SBDs by utilizing the advantageous (011) \\b{eta}-Ga2O3 epilayers with low background doping, reduced killer dislocation effects, and effective field management for high-voltage and high-temperature applications.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.04388",
  "author_total": 5,
  "authors": [
    {
      "name": "Emerson J. Hollar"
    },
    {
      "name": "Aaron M. Adams"
    },
    {
      "name": "Nolan S. Hendricks"
    },
    {
      "name": "Andrew J. Green"
    },
    {
      "name": "Esmat Farzana"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/c8knhp57a4az1.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.04388",
  "fulltext_url": null,
  "id": "c8knhp57a4az1",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.04388",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "cs.SY"
    ],
    [
      "arxiv",
      "eess.SY"
    ],
    [
      "openalex",
      "2504|Ga2O3 and related materials"
    ]
  ],
  "openalex": "W7220662302",
  "pdf_url": "https://arxiv.org/pdf/2610.04388",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-03",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/c8knhp57a4az1.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:27:01Z",
      "native_id": "2610.04388",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.04388"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Kilovolt-class Vertical (011) \\b{eta}-Ga2O3 Schottky Diodes for High Voltage and High Temperature Applications",
  "title_text": "Kilovolt-class Vertical (011) \\b{eta}-Ga2O3 Schottky Diodes for High Voltage and High Temperature Applications",
  "type": "preprint",
  "updated_at": "2026-10-30T12:27:01Z",
  "url": "https://research.draconitic.com/paper/c8knhp57a4az1",
  "venue": "arXiv",
  "versions": []
}