{
  "abstract": "Electrochemically formed two-dimensional free surfaces (2DFS) decouple Ge epilayers from the misfit-dislocation network at the Ge/Si interface, but the origin of their selectivity has remained unclear. We combine finite-volume current-distribution modelling, including charge-transfer kinetics, with a one-dimensional Poisson analysis of the p-Ge/p+-Si heterojunction. With realistic conductivities, an ohmic description would drive 77% of the anodic current through Ge, whereas hole-limited charge transfer reduces this fraction to 0.07%, independently of the electrolyte conductivity. The valence-band offset accumulates holes on the Ge side up to ~1019 cm--3 within a self-limited nanometric layer, which localizes dissolution at the interface. The model yields design rules for the doping contrast (NSi/NGe ___ 60) and the mesa width (___ 3.6$λ$, with $λ$ $\\approx$ 1.7 $μ$m).",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": "Journal reference: SEMICON Europa, Nov 2026, Munich, Germany",
  "arxiv": "2611.04589",
  "author_total": 7,
  "authors": [
    {
      "name": "Youcef A Bioud"
    },
    {
      "name": "Meriem Bouchilaoun"
    },
    {
      "name": "Waldemar Schreiber"
    },
    {
      "name": "Redouane Amrar"
    },
    {
      "name": "Gilles Patriarche"
    },
    {
      "name": "Ali Soltani"
    },
    {
      "name": "Stefan Janz"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/ca09bbdss63n6.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2611.04589",
  "fulltext_url": null,
  "id": "ca09bbdss63n6",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2611.04589",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2611.04589",
  "pmcid": null,
  "pmid": null,
  "published": "2026-11-03",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/ca09bbdss63n6.ris",
  "sources": [
    {
      "first_seen": "2026-11-04T15:21:25Z",
      "native_id": "2611.04589",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2611.04589"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Interfacial Hole Accumulation Enables Selective Free-Surface Formation in Ge-on-Si",
  "title_text": "Interfacial Hole Accumulation Enables Selective Free-Surface Formation in Ge-on-Si",
  "type": "preprint",
  "updated_at": "2026-11-04T15:21:25Z",
  "url": "https://research.draconitic.com/paper/ca09bbdss63n6",
  "venue": "arXiv",
  "versions": []
}