{
  "abstract": "Defect centers in gallium nitride (GaN) emerge as bright sources of single photons, which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation techniques have not been a subject of thorough studies. This work presents evidence that by tuning the excitation laser energy to specific resonance values, the excitation efficiency can be enhanced, resulting in a relative increase of photoluminescence intensity by up to an order of magnitude. The resonances can be selectively addressed with linearly polarized light, while the emission dipoles remain unchanged, enabling polarization-controlled enhancement. These results establish an efficient method of excitation for GaN-based emitters, thereby increasing the generation rate of photons. The data are consistent with excitation via localized vibrational modes (LVMs) associated with point-defect complexes, establishing a practical quasi-resonant route to brighter, polarization-addressable operation of GaN defect emitters and clarifying their energy-level structure.",
  "abstract_shown": true,
  "affiliations": [
    "University of Warsaw, Faculty of Physics, Institute of Experimental Physics, Ludwika Pasteura 5, Warsaw 02-093, Poland.",
    "Institute of High Pressure Physics \"Unipress\", Polish Academy of Sciences, Sokołowska 29/37, Warsaw 01-142, Poland."
  ],
  "article_type": "research article",
  "arxiv": null,
  "author_total": 9,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Nilesh Dalla",
      "orcid": "0000-0001-7315-1019"
    },
    {
      "affs": [
        0
      ],
      "name": "Paweł Kulboka"
    },
    {
      "affs": [
        0
      ],
      "name": "Michał Kobecki"
    },
    {
      "affs": [
        0
      ],
      "name": "Jan Misiak"
    },
    {
      "affs": [
        1
      ],
      "name": "Paweł Prystawko"
    },
    {
      "affs": [
        0
      ],
      "name": "Tomasz Kazimierczuk",
      "orcid": "0000-0001-6545-4167"
    },
    {
      "affs": [
        0
      ],
      "name": "Piotr Kossacki",
      "orcid": "0000-0002-7558-1044"
    },
    {
      "affs": [
        1
      ],
      "name": "Henryk Turski",
      "orcid": "0000-0002-2686-9842"
    },
    {
      "affs": [
        0
      ],
      "name": "Tomasz Jakubczyk"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/che2x2gwpfan2.bib",
  "cited_by": 0,
  "doi": "10.1021/acsphotonics.6c02170",
  "fulltext_url": "https://europepmc.org/articles/PMC13742290",
  "id": "che2x2gwpfan2",
  "issns": [
    "2330-4022"
  ],
  "landing_url": "https://europepmc.org/article/MED/42997567",
  "language": "eng",
  "licence": "CC-BY",
  "licence_label": "CC BY",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7160511408",
  "pdf_url": "https://europepmc.org/articles/PMC13742290?pdf=render",
  "pmcid": "PMC13742290",
  "pmid": "42997567",
  "published": "2026-10-15",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/che2x2gwpfan2.ris",
  "sources": [
    {
      "first_seen": "2026-11-09T15:20:41Z",
      "native_id": "MED:42997567",
      "source": "europepmc",
      "url": "https://europepmc.org/article/MED/42997567"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3104|GaN-based semiconductor devices and materials",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters.",
  "title_text": "Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters.",
  "type": "peer-reviewed",
  "updated_at": "2026-11-09T15:20:41Z",
  "url": "https://research.draconitic.com/paper/che2x2gwpfan2",
  "venue": "ACS photonics",
  "versions": []
}