{
  "abstract": "This work demonstrates the high-temperature (room to 800 $^\\circ$C) operation of thin Al$_{0.62}$Ga$_{0.38}$N digital alloy (DA) short-period superlattice (SPSL), and random alloy (RA) Al$_{0.64}$Ga$_{0.36}$N channel MOSHEMTs on sapphire. The RA devices employ a doped $n^{+}$-85%-Al barrier and a highly doped $n^{++}$-Al$_{0.86\\rightarrow0.20}$Ga$_{0.14\\rightarrow0.80}$N reverse-graded layer (RGL) for surface ohmic contact formation, whereas the DA devices employ a binary AlN barrier and selectively regrown $n^{++}$-GaN source/drain contacts. At 800 $^\\circ$C, the DA channel devices exhibit better thermal stability: their saturated drain current decreases from 460 to 172 mA/mm (62.6%) compared with 338 to 98 mA/mm (71.0%) for the RA channel, and a lower subthreshold swing (459 for DA versus 550 mV/dec for RA). All tested DA devices also exhibit superior threshold-voltage stability ($<\\pm 10\\%$ versus $>\\pm 19\\%$ for RA) and maintain an ON/OFF current ratio >$10^4$ at 800 $^\\circ$C, compared with ~$10^3$ for RA, thus establishing the DA channel HEMTs as a promising new platform for high-temperature electronics.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.39053",
  "author_total": 14,
  "authors": [
    {
      "name": "Abdullah Al Mamun Mazumder"
    },
    {
      "name": "Tariq Jamil"
    },
    {
      "name": "Mafruda Rahman"
    },
    {
      "name": "Muhammad Ali"
    },
    {
      "name": "Ankit Malik"
    },
    {
      "name": "Anthony Joyce"
    },
    {
      "name": "Patrick Darmawi-Iskandar"
    },
    {
      "name": "Chandan Joishi"
    },
    {
      "name": "Mansura Sadek"
    },
    {
      "name": "James G. Fiorenza"
    },
    {
      "name": "Manoj Kumar Chandra Mohan"
    },
    {
      "name": "Grigory Simin"
    },
    {
      "name": "Tomás Palacios"
    },
    {
      "name": "Asif Khan"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/cnx9ca107n7wv.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.39053",
  "fulltext_url": null,
  "id": "cnx9ca107n7wv",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.39053",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.app-ph"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.39053",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-28",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/cnx9ca107n7wv.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:36:23Z",
      "native_id": "2610.39053",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.39053"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    }
  ],
  "title": "800 $^\\circ$C Air-Ambient Operation of Extreme-Bandgap Al$_{x}$Ga$_{1-x}$N (x>0.6) Digital and Random-Alloy Channel HEMTs",
  "title_text": "800 ^∘C Air-Ambient Operation of Extreme-Bandgap Al_xGa_1−xN (x>0.6) Digital and Random-Alloy Channel HEMTs",
  "type": "preprint",
  "updated_at": "2026-11-01T12:20:45Z",
  "url": "https://research.draconitic.com/paper/cnx9ca107n7wv",
  "venue": "arXiv",
  "versions": []
}