{
  "abstract": "Bi 1-x Sb x ) 2 Te 3 ternary compound has emerged as a promising topological insulator, displaying intrinsic quantum transport through its topological surface states. It exhibits highly insulating bulk characteristics and tunable Dirac carriers, leading to practical device applications.\n\nHowever, its integration on industrial substrates for future applications remains difficult. Here, we report the growth of (Bi 1-x Sb x ) 2 Te 3 thin films on wafer-scale, industrial GaAs (111)A substrates using molecular beam epitaxy. Structural characterizations demonstrate the singlecrystalline nature of (Bi 1-x Sb x ) 2 Te 3 thin films, characterized by a layered crystalline structure typical of van der Waals topological insulators, and chemical homogeneity. The influence of the Te flux during growth is found to be critical for preserving the crystalline quality. Angleresolved photoemission spectroscopy (ARPES) measurements confirm the presence of topologically protected surface states for all studied compositions, and reveal that the electronic structure depends on the Sb composition. Complementary temperature-dependent transport measurements indicate that electrical conduction arises from both the topological surface states and bulk channels. The correlation between both demonstrates that trivial bulk states still contribute significantly to conduction, even for the composition identified as structurally and electronically optimized.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 19,
  "authors": [
    {
      "name": "Salima Fekraoui"
    },
    {
      "name": "Léo Rubiola"
    },
    {
      "name": "Stoyan Michaël Vercruysse"
    },
    {
      "name": "Richard Monflier"
    },
    {
      "name": "Léo Bourdon"
    },
    {
      "name": "Maryam Dehaghani"
    },
    {
      "name": "Robin Cours"
    },
    {
      "name": "Mohamed Ali Khaled"
    },
    {
      "name": "Richard Daubriac"
    },
    {
      "name": "Leonardo Cancellara"
    },
    {
      "name": "Quentin Gravelier"
    },
    {
      "name": "Chiara Bigi"
    },
    {
      "name": "François Bertran"
    },
    {
      "name": "Alexandre Arnoult"
    },
    {
      "name": "Cécile Marcelot"
    },
    {
      "name": "Bénédicte Warot-Fonrose"
    },
    {
      "name": "Pier Francesco Fazzini"
    },
    {
      "name": "Corentin Durand"
    },
    {
      "name": "Sébastien Plissard"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/cqex06wscjrv7.bib",
  "cited_by": 0,
  "doi": "10.1021/acs.cgd.6c00219",
  "fulltext_url": null,
  "id": "cqex06wscjrv7",
  "issns": [
    "1528-7483",
    "1528-7505"
  ],
  "landing_url": "https://laas.hal.science/hal-05774475v1",
  "language": "en",
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.phys"
    ],
    [
      "openalex",
      "3107|Topological Materials and Phenomena"
    ]
  ],
  "openalex": "W7165540315",
  "pdf_url": "https://laas.hal.science/hal-05774475/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-06-22",
  "publisher": "American Chemical Society",
  "ris": "https://research.draconitic.com/paper/cqex06wscjrv7.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:46Z",
      "native_id": "hal-05774475",
      "source": "hal",
      "url": "https://laas.hal.science/hal-05774475v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3107|Topological Materials and Phenomena",
      "subfield": "amo"
    }
  ],
  "title": "Structural and Electrical Characterizations of Large-Scale Epitaxially Grown (Bi 1– x Sb x ) 2 Te 3 Topological Insulator",
  "title_text": "Structural and Electrical Characterizations of Large-Scale Epitaxially Grown (Bi 1– x Sb x ) 2 Te 3 Topological Insulator",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:46Z",
  "url": "https://research.draconitic.com/paper/cqex06wscjrv7",
  "venue": "Crystal Growth & Design",
  "versions": []
}