{
  "abstract": "GaN p-channel field-effect transistors (p-FETs) are critical for enabling complementary integration of power and logic, while offering high breakdown capability. However, achieving high on-current in GaN p-FETs remains a significant challenge, primarily due to the low hole concentration, poor mobility, and challenges in forming stable, low-resistance ohmic contacts. Here, we present a novel GaN p-FET architecture that exhibits unconventional electron conduction, which helps enhance both thermal response and current modulation. We conduct a comprehensive investigation of heavily Mg-doped p++-GaN layers, focusing on contact optimization for high-temperature operation. Structural and interfacial characterization confirms high crystal quality and a thermally robust Ni/Au contact stack stabilized by an interfacial NixOy layer. This strategic interfacial layer, combined with moderate-temperature annealing, promotes Mg activation and suppresses oxygen-related traps, resulting in a ~ 73% reduction in contact resistance. Temperature-dependent analysis further reveals non-monotonic Schottky barrier modulation driven by interface evolution. Integrated into the device, this contact strategy enables thermally enhanced operation, with a drastically increase in on-state current and threshold voltage shifting positively by ~ 69% with temperature. These findings highlight a model shift in GaN p-FET design, where interface study and transport-mode innovation enable high-performance, thermally resilient devices for next-generation power integration.",
  "abstract_shown": true,
  "affiliations": [
    "Univ. Grenoble Alpes, CEA, Leti, Grenoble, France",
    "Delphea, Montpellier, France"
  ],
  "article_type": "research article",
  "arxiv": null,
  "author_total": 14,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Mohit Kumar",
      "orcid": "0000-0003-0305-7427"
    },
    {
      "affs": [
        0
      ],
      "name": "Laurent Xu"
    },
    {
      "affs": [
        0,
        1
      ],
      "name": "Timothée labau"
    },
    {
      "affs": [
        0
      ],
      "name": "Jérôme Biscarrat"
    },
    {
      "affs": [
        0
      ],
      "name": "Simona Torrengo"
    },
    {
      "affs": [
        0
      ],
      "name": "Christophe Lecouvey"
    },
    {
      "affs": [
        0
      ],
      "name": "Matthew Charles"
    },
    {
      "affs": [
        0
      ],
      "name": "Caroline Elias"
    },
    {
      "affs": [
        0
      ],
      "name": "Aurélien Olivier"
    },
    {
      "affs": [
        0
      ],
      "name": "Estelle Chanel Petitjean"
    },
    {
      "affs": [
        0
      ],
      "name": "Zineb Saghi"
    },
    {
      "affs": [
        0
      ],
      "name": "Joelle Zgheib"
    },
    {
      "affs": [
        0
      ],
      "name": "René Escoffier",
      "orcid": "0000-0003-2312-9299"
    },
    {
      "affs": [
        0
      ],
      "name": "Julien Buckley",
      "orcid": "0000-0003-0082-9903"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/czkd0axgcwwk4.bib",
  "cited_by": 0,
  "doi": "10.1038/s44172-026-00717-1",
  "fulltext_url": "https://pmc.ncbi.nlm.nih.gov/articles/PMC13710741/",
  "id": "czkd0axgcwwk4",
  "issns": [
    "2731-3395"
  ],
  "landing_url": "https://doi.org/10.1038/s44172-026-00717-1",
  "language": "en",
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "heading",
      "Article"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7167223454",
  "pdf_url": "https://www.nature.com/articles/s44172-026-00717-1_reference.pdf",
  "pmcid": "PMC13710741",
  "pmid": "42399419",
  "published": "2026-07-03",
  "publisher": "Nature Publishing Group",
  "ris": "https://research.draconitic.com/paper/czkd0axgcwwk4.ris",
  "sources": [
    {
      "first_seen": "2026-10-31T12:21:39Z",
      "native_id": "PMC13710741",
      "source": "pmc",
      "url": "https://doi.org/10.1038/s44172-026-00717-1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3104|GaN-based semiconductor devices and materials",
      "subfield": "condensed-matter"
    }
  ],
  "title": "A robust GaN p-FET with unconventional electron conduction",
  "title_text": "A robust GaN p-FET with unconventional electron conduction",
  "type": "peer-reviewed",
  "updated_at": "2026-10-31T12:21:39Z",
  "url": "https://research.draconitic.com/paper/czkd0axgcwwk4",
  "venue": "Communications Engineering",
  "versions": []
}