{
  "abstract": "Spin qubits are an attractive platform for scalable quantum computation, and recently, laterally gated quantum dots (QDs) in Ge heterostructures have emerged as a leading implementation. Radio-frequency (RF) single-hole transistor (SHT) spin readout and integrated superconducting resonator charge readout have demonstrated in Ge QDs, but their wiring overhead and on-chip size can pose challenges, while gate dispersive (GD) readout, which requires less on-chip overhead, has yet to be demonstrated for Ge QDs. Here we demonstrate compact, low-overhead RF-GD charge readout of a Ge double QD (DQD), both directly, and assisted by a proximal single-hole box (SHB). We resolve QD loading and interdot transitions with both techniques. We obtain unity signal-to-noise ratio (SNR) in 2.7 millisecond and 135 microsecond integration time, for gate-dispersive detection of the DQD and SHB-DQD systems, respectively. We find that the SHB enhances the interdot signal-to-noise ratio (SNR) of our 540 MHz circuit by a factor of 20 for a DQD coupling $t_c \\approx 5$ GHz. Power and temperature dependent measurements verify that SNR is limited by dielectric loss. We argue that with achievable improvements in dielectric loss and amplification, high-fidelity (99\\%) readout in less than 1 microsecond should be possible, assuming ideal spin-to-charge conversion, which has seen rapid recent progress. These results establish a simple and compact gate-based readout approach for direct and SHB-enhanced readout of Ge heterostructure QDs.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.01100",
  "author_total": 5,
  "authors": [
    {
      "name": "M. R. Tanvir"
    },
    {
      "name": "E. Sajadi"
    },
    {
      "name": "M. Veldhorst"
    },
    {
      "name": "G. Scappucci"
    },
    {
      "name": "J. Salfi"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/d4jvrd092j3pp.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.01100",
  "fulltext_url": null,
  "id": "d4jvrd092j3pp",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.01100",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "openalex",
      "3107|Quantum and electron transport phenomena"
    ]
  ],
  "openalex": "W7216070628",
  "pdf_url": "https://arxiv.org/pdf/2610.01100",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-19",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/d4jvrd092j3pp.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:34:04Z",
      "native_id": "2610.01100",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.01100"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Gate Dispersive Charge Detection in Ge/SiGe Quantum Dots",
  "title_text": "Gate Dispersive Charge Detection in Ge/SiGe Quantum Dots",
  "type": "preprint",
  "updated_at": "2026-10-30T12:34:04Z",
  "url": "https://research.draconitic.com/paper/d4jvrd092j3pp",
  "venue": "arXiv",
  "versions": []
}