{
  "abstract": "Superconducting boron-doped diamond (BDD) films were grown on 4-inch silicon wafers by microwave plasma chemical vapour deposition using gas-phase B/C ratios ranging from 6536 to 36421 ppm. Surface morphology, boron incorporation and superconducting properties were investigated as a function of gas-phase boron concentration. No systematic variation in apparent lateral grain size was observed across the series. Superconductivity was observed in all films except that grown at a B/C ratio of 6536 ppm within the measured temperature range down to 2 K. The superconducting transition temperature initially increased with increasing B/C ratio, reaching a maximum T$_c$ of 4.03 K at 24691 ppm, before decreasing at higher gas-phase B/C ratios. The corresponding resistive upper critical field at 2 K reached 3.091 T. Raman spectroscopy showed an increase in boron incorporation with increasing gas-phase B/C ratio up to 30303 ppm, followed by a slight decrease at 36421 ppm. Spatial measurements across the film grown at 24691 ppm showed T$_c$ values of 4.02, 4.19 and 3.33 K at the centre, intermediate and edge positions, respectively, with Raman spectroscopy showing a corresponding spatial variation in boron concentration. Comparison with previous growth on 2-inch wafers showed that substantially higher gas-phase B/C ratios were required to obtain comparable boron concentrations and superconducting properties on 4-inch wafers, indicating reduced boron incorporation efficiency during large-area growth. These results demonstrate the feasibility of producing superconducting BDD over a substantial area of a 4-inch silicon wafer while identifying boron incorporation and radial uniformity as key parameters for further wafer-scale optimisation.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.15282",
  "author_total": 2,
  "authors": [
    {
      "name": "Soumen Mandal"
    },
    {
      "name": "Oliver A Williams"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/d5xjhdfm0yfvh.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.15282",
  "fulltext_url": null,
  "id": "d5xjhdfm0yfvh",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.15282",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "cond-mat.supr-con"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2609.15282",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-14",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/d5xjhdfm0yfvh.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:21:25Z",
      "native_id": "2609.15282",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.15282"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Growth of superconducting boron doped diamond on 4inch silicon wafers",
  "title_text": "Growth of superconducting boron doped diamond on 4inch silicon wafers",
  "type": "preprint",
  "updated_at": "2026-10-30T12:21:25Z",
  "url": "https://research.draconitic.com/paper/d5xjhdfm0yfvh",
  "venue": "arXiv",
  "versions": []
}