{
  "abstract": "In this work, we demonstrate submicron-gate $β-Ga_{2}O_{3}$ FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 100 nm-wide fins to improve electrostatic control of a high sheet charge density channel of $3.3\\times 10^{13}$ cm-2. A 150 nm-gate-length FinFET exhibits a maximum drain current density of 764 mA/mm at VGS = 1 V and VDS = 10 V, an on-resistance of 9.1 $Ω$.mm, and an Ion/Ioff ratio exceeding $10^9$. The device also shows a peak transconductance of 43 mS/mm and de-embedded $f_{T}/f_{MAX}$ values of 6.3/2.0 GHz. Pulsed I-V measurements indicate ~20 % current collapse, attributed primarily to trapping at etched fin sidewalls and the $Al_{2} O_{3}$/ $β-Ga_{2}O_{3}$ interface. These results show that delta-doped $β-Ga_{2}O_{3}$ FinFETs can simultaneously achieve high drive current, strong current modulation, and GHz-frequency operation, providing a scalable device platform for future power and RF electronics.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.15155",
  "author_total": 10,
  "authors": [
    {
      "name": "Nabasindhu Das"
    },
    {
      "name": "Cameron Gorsak"
    },
    {
      "name": "Pushpanshu Tripathi"
    },
    {
      "name": "Ankita Kashyap"
    },
    {
      "name": "Noor Jahan Nipu"
    },
    {
      "name": "Advait Gilankar"
    },
    {
      "name": "Hari Nair"
    },
    {
      "name": "Uttam Singisetti"
    },
    {
      "name": "Trevor Thornton"
    },
    {
      "name": "Nidhin Kurian Kalarickal"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/d5zv0re749n9g.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.15155",
  "fulltext_url": null,
  "id": "d5zv0re749n9g",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.15155",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "openalex",
      "2504|Ga2O3 and related materials"
    ]
  ],
  "openalex": "W7221782547",
  "pdf_url": "https://arxiv.org/pdf/2610.15155",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-10",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/d5zv0re749n9g.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:29:06Z",
      "native_id": "2610.15155",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.15155"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Sub-Micron Gate $β-Ga_{2}O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $10^{9}$",
  "title_text": "Sub-Micron Gate β−Ga_2O_3 FinFETs with Current Density > 750 mA/mm and Ion/Ioff Ratio > 10^9",
  "type": "preprint",
  "updated_at": "2026-10-30T12:29:06Z",
  "url": "https://research.draconitic.com/paper/d5zv0re749n9g",
  "venue": "arXiv",
  "versions": []
}