{
  "abstract": "Expanding integrated photonics into the blue spectral range requires high-performance light sources, making the gallium nitride (GaN) material family indispensable. While silicon nitride (SiN) platforms offer a robust, CMOS compatible passive ecosystem for visible wavelengths, seamlessly integrating GaN lasers remains a major bottleneck. Conventional heterogeneous integration methods present distinct trade-offs: full-wafer bonding achieves high throughput but requires careful management of thermal and lattice mismatches across large areas, whereas flip-chip bonding ensures high yield through pretesting but is constrained by sequential processing speed. In this landscape, micro-transfer printing (MTP) emerges as a disruptive, material-efficient alternative, bypassing these limitations by combining high-density parallel integration with known-good-die selection. Applying MTP to GaN, however, presents a significant material challenge: due to its chemical inertness and strong III-N bonds, device release typically relies on electrochemical etching, which can compromise material quality. Here, we overcome this hurdle and demonstrate the first micro-transfer printed blue lasers on a SiN platform. Using a heavily doped n-type sacrificial layer together with optimized electrochemical etching conditions, we release smooth-surfaced thin-film light sources from bulk GaN substrates. Following release, the devices are integrated and butt-coupled to SiN fork-shaped edge couplers, achieving high current densities exceeding 20 kA$/$cm$^2$ alongside lasing at 455 nm. These results expand the visible integrated photonic toolkit and establish a framework for multi-wavelength integration, opening new avenues for next-generation technologies including flow cytometry, quantum computing, optical communications, and augmented/virtual reality.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.15390",
  "author_total": 11,
  "authors": [
    {
      "name": "Konstantinos Akritidis"
    },
    {
      "name": "Krzysztof Gibasiewicz"
    },
    {
      "name": "Han Wang"
    },
    {
      "name": "Iryna Levchenko"
    },
    {
      "name": "Max Kiewiet"
    },
    {
      "name": "Maximilien Billet"
    },
    {
      "name": "Mikołaj Chlipała"
    },
    {
      "name": "Karolina Peret-Malessa"
    },
    {
      "name": "Pol Van Dorpe"
    },
    {
      "name": "Henryk Turski"
    },
    {
      "name": "Bart Kuyken"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/dg0b0yde3221r.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.15390",
  "fulltext_url": null,
  "id": "dg0b0yde3221r",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.15390",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.optics"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7213347643",
  "pdf_url": "https://arxiv.org/pdf/2609.15390",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-14",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/dg0b0yde3221r.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:21:25Z",
      "native_id": "2609.15390",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.15390"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.optics",
      "subfield": "optics-photonics"
    }
  ],
  "title": "Micro-transfer Printed Blue InGaN Lasers on Silicon Nitride Photonic Integrated Circuits",
  "title_text": "Micro-transfer Printed Blue InGaN Lasers on Silicon Nitride Photonic Integrated Circuits",
  "type": "preprint",
  "updated_at": "2026-10-30T12:21:25Z",
  "url": "https://research.draconitic.com/paper/dg0b0yde3221r",
  "venue": "arXiv",
  "versions": []
}