{
  "abstract": "Level-set simulators of etching and deposition move the surface with a velocity that depends on adsorbate coverages. These coverages are usually computed from balances solved and coded by hand for each chemistry, whereas voxel-based Monte Carlo profile simulators read the reaction mechanism as data. For the open-source level-set simulator ViennaPS, this work presents a surface model whose rate laws, Jacobian and velocity are derived from a reaction file and evaluated with ray-traced fluxes. Steady-state coverages are obtained with Newton's method and transient coverages with a conservative integrator. One compiled model is applied to eight chemistries for chemical vapour deposition, selective epitaxy, plasma etching, sputtering and atomic layer deposition. It reproduces a hand-written silicon etch model to seven significant digits at a single point and within the Monte Carlo noise in a masked trench. In a high-aspect-ratio cavity, alumina conformality is determined by a trimethylaluminium reaction probability within the measured range.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2611.03707",
  "author_total": 3,
  "authors": [
    {
      "name": "Lado Filipovic"
    },
    {
      "name": "Tobias Reiter"
    },
    {
      "name": "Philipp Haslhofer"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/dggvms3mbjft1.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2611.03707",
  "fulltext_url": null,
  "id": "dggvms3mbjft1",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2611.03707",
  "language": null,
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "arxiv",
      "physics.chem-ph"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2611.03707",
  "pmcid": null,
  "pmid": null,
  "published": "2026-11-01",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/dggvms3mbjft1.ris",
  "sources": [
    {
      "first_seen": "2026-11-04T15:21:25Z",
      "native_id": "2611.03707",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2611.03707"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "arxiv:physics.chem-ph",
      "subfield": "physical"
    },
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Surface chemistry as data for level-set simulation of etching and deposition",
  "title_text": "Surface chemistry as data for level-set simulation of etching and deposition",
  "type": "preprint",
  "updated_at": "2026-11-05T15:20:35Z",
  "url": "https://research.draconitic.com/paper/dggvms3mbjft1",
  "venue": "arXiv",
  "versions": []
}