{
  "abstract": "Functionalising the back-end-of-line (BEOL) of CMOS with emerging materials is a key route to neural network accelerators and neuromorphic systems. In this work, we demonstrate for the first time the integration of 2-terminal ferroelectric synaptic weights in the BEOL of as-delivered commercial 180 nm CMOS dies. A novel material stack is proposed, in which a WOx/[HfO2-ZrO2] bilayer is sandwiched between TiN and Mo electrodes. For devices annealed at 450 °C, programming below 1.8 V is achieved with a cycle-to-cycle variation below 3 %. Synaptic weights annealed at 500 °C exhibit more gradual weight updates, while the tested underlying NMOS transistors remain functional after the complete integration process. The trade-off between thermal budget and on-device training performance is illustrated using hardware-aware neural network simulations.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.37530",
  "author_total": 4,
  "authors": [
    {
      "name": "Alexander Flasby"
    },
    {
      "name": "Anwesha Panda"
    },
    {
      "name": "Nathan Savoia"
    },
    {
      "name": "Laura Bégon-Lours"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/dkm7855x5s119.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.37530",
  "fulltext_url": null,
  "id": "dkm7855x5s119",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.37530",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "openalex",
      "2208|Ferroelectric and Negative Capacitance Devices"
    ]
  ],
  "openalex": "W7224134079",
  "pdf_url": "https://arxiv.org/pdf/2610.37530",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-27",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/dkm7855x5s119.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:35:50Z",
      "native_id": "2610.37530",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.37530"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Back-End-Of-Line Integration of 2-Terminal Ferroelectric Hafnia Synaptic Weights on Commercial CMOS Process",
  "title_text": "Back-End-Of-Line Integration of 2-Terminal Ferroelectric Hafnia Synaptic Weights on Commercial CMOS Process",
  "type": "preprint",
  "updated_at": "2026-10-30T12:35:50Z",
  "url": "https://research.draconitic.com/paper/dkm7855x5s119",
  "venue": "arXiv",
  "versions": []
}