{
  "abstract": "Inthisstudy,wereviewrecentadvancesin InGaAs/InAlAs avalanche photodiodes (APDs), which remain anestablishedandwidelyusednear-infrareddetection technology for optical-fiber communication, light detection and ranging (lidar), and single-photon quantum applications. This paper reviews recent progress in the epitaxial growth, device structure,andperformanceoptimizationofInGaAs/InAlAs APDs,withemphasisonmetalorganicchemicalvapor deposition(MOCVD)andmolecularbeamepitaxy(MBE) growthconsiderations,separateabsorption,grading,charge, and multiplication (SAGCM) device architectures, doping and gain-stage engineering for excess-noise reduction, and emerging directions including single-photon avalanche diodes (SPADs) for quantum key distribution, focal-plane array receivers for lidar, andmechanicallyflexibledetectorplatforms.Comparative performance againstalternativemultiplication-layermaterial systems is also discussed. This review highlights the trade-offs between thematurityoftheInGaAs/InAlAs system and the lowerexcessnoisedemonstratedbyantimonide-based alternatives,whileidentifyingopenchallengesinnoise suppression, thermal stability, and large-scale array integration for continued development of this device family.",
  "abstract_shown": true,
  "affiliations": [
    "Department of Electrical and Electronic Engineering",
    "Ahsanullah University of Science and Technology"
  ],
  "article_type": null,
  "arxiv": null,
  "author_total": 1,
  "authors": [
    {
      "affs": [
        0,
        1
      ],
      "name": "Md. Safin Mahmood Shomyo",
      "orcid": "0009-0008-1837-5712"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/dzbfev57erps6.bib",
  "cited_by": 0,
  "doi": "10.26434/chemrxiv.15008516/v1",
  "fulltext_url": null,
  "id": "dzbfev57erps6",
  "issns": [],
  "landing_url": "https://chemrxiv.org/doi/full/10.26434/chemrxiv.15008516/v1",
  "language": null,
  "licence": "CC-BY-NC-ND",
  "licence_label": "CC BY-NC-ND",
  "licence_source": "journal",
  "licence_url": "https://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "2208|Advanced Semiconductor Detectors and Materials"
    ]
  ],
  "openalex": "W7211951651",
  "pdf_url": "https://chemrxiv.org/doi/pdf/10.26434/chemrxiv.15008516/v1",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-08",
  "publisher": "American Chemical Society (ACS)",
  "ris": "https://research.draconitic.com/paper/dzbfev57erps6.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:19Z",
      "native_id": "10.26434/chemrxiv.15008516",
      "source": "chemrxiv",
      "url": "https://chemrxiv.org/doi/full/10.26434/chemrxiv.15008516/v1"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "source:chemrxiv",
      "subfield": "general"
    }
  ],
  "title": "InGaAs/InAlAs Avalanche Photodiodes: Recent Advances in Growth, Device Structure, Noise Performance, and Emerging Applications",
  "title_text": "InGaAs/InAlAs Avalanche Photodiodes: Recent Advances in Growth, Device Structure, Noise Performance, and Emerging Applications",
  "type": "preprint",
  "updated_at": "2026-10-30T12:17:19Z",
  "url": "https://research.draconitic.com/paper/dzbfev57erps6",
  "venue": "ChemRxiv",
  "versions": []
}