{
  "abstract": "We demonstrate UWBG AlGaN polarization-graded field-effect transistors (PolFETs) incorporating room-temperature sputtered p-type oxide Cr2O3 as a P-N heterojunction gate, enabling superior field management for lateral device breakdown compared to conventional Schottky gates. Devices using reverse-graded n-AlGaN contact layers achieved a record-low Rc of 0.56 Ω-mm. The Cr2O3 gate exhibits a turn-on voltage VON > 3.5 V and a positive threshold voltage shift of +1.63 V relative to Schottky gates, displaying enhanced channel depletion from the P-N junction. Fabricated devices show high Imax (590 mA/mm) and ION/IOFF of 3x10^7. Devices exhibited state-of-the-art VBR > 2.5 kV with 11.2 mΩ-cm^2 specific on-resistance (LGD = 9.55 um, average breakdown field > 2.5 MV/cm), while shorter gate-drain devices showed high breakdown fields up to 5.3 MV/cm with 0.28 mΩ-cm^2 specific on-resistance. These results showcase sputtered p-Cr2O3 as a viable, low thermal budget P-N junction gate technology for high-Al-composition AlGaN transistors in RF and power electronics.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.29990",
  "author_total": 11,
  "authors": [
    {
      "name": "Jonathan Pratt"
    },
    {
      "name": "Yizheng Liu"
    },
    {
      "name": "Ijaas Mohamed"
    },
    {
      "name": "Seungheon Shin"
    },
    {
      "name": "Akilesh Srikanth"
    },
    {
      "name": "Md Saklain Morshed"
    },
    {
      "name": "Brianna A. Klein"
    },
    {
      "name": "Andrew Armstrong"
    },
    {
      "name": "Andrew A. Allerman"
    },
    {
      "name": "Sriram Krishnamoorthy"
    },
    {
      "name": "Siddharth Rajan"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/e78d1kep604zb.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.29990",
  "fulltext_url": null,
  "id": "e78d1kep604zb",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.29990",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7214303262",
  "pdf_url": "https://arxiv.org/pdf/2609.29990",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-24",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/e78d1kep604zb.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:24:11Z",
      "native_id": "2609.29990",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.29990"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    }
  ],
  "title": "Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage",
  "title_text": "Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage",
  "type": "preprint",
  "updated_at": "2026-10-30T12:24:11Z",
  "url": "https://research.draconitic.com/paper/e78d1kep604zb",
  "venue": "arXiv",
  "versions": []
}