{
  "abstract": "In this work, we demonstrate high-mobility top-gate (TG) atomic-layer-deposited (ALD) crystalline In2O3 transistors through simultaneous interface and crystallinity engineering. First, a HfO2/In2O3/HfO2 stack is employed, enabling epitaxial-like crystallization of the ultrathin In2O3 channel, because of the lattice matching between monoclinic phase HfO2 and cubic phase In2O3. Second, an oxygen-rich gate insulator process is applied using high-dose O3 precursor and elevated deposition temperature, effectively suppressing oxygen scavenging during gate dielectric deposition, significantly reducing interfacial defect formation. Third, the homogeneous In-O bonding network in crystalline In2O3 exhibits substantially enhanced resistance to oxygen scavenging by source/drain contacts, which significantly improves the immunity to threshold voltage (VTH) roll-off at short channel length compared to amorphous In2O3. As a result, high-performance TG long-channel In2O3 transistors are achieved with a high mobility of 163 cm2/V s and a steep subthreshold slope of 64 mV/dec. High-performance TG short-channel In2O3 transistors with high ION of 1650 μA/μm at VD of 1 V, large on/off ratio over 1010 and VTH of -0.27 V are demonstrated. These results establish lattice-engineered crystalline In2O3 as an effective strategy for high-mobility, aggressively scaled TG oxide transistors suitable for BEOL-compatible applications.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.15135",
  "author_total": 5,
  "authors": [
    {
      "name": "Kai Jiang"
    },
    {
      "name": "Chen Wang"
    },
    {
      "name": "Ziheng Wang"
    },
    {
      "name": "Zhiyu Lin"
    },
    {
      "name": "Mengwei Si"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/ea4k933smzrnx.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.15135",
  "fulltext_url": null,
  "id": "ea4k933smzrnx",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.15135",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2208|Semiconductor materials and devices"
    ]
  ],
  "openalex": "W7213334536",
  "pdf_url": "https://arxiv.org/pdf/2609.15135",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-14",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/ea4k933smzrnx.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:21:25Z",
      "native_id": "2609.15135",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.15135"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Demonstrate of High-Performance Top-Gate ALD Crystalline In2O3 Transistor Enabled by Lattice-Matched HfO2 and In2O3 Heterostructure",
  "title_text": "Demonstrate of High-Performance Top-Gate ALD Crystalline In2O3 Transistor Enabled by Lattice-Matched HfO2 and In2O3 Heterostructure",
  "type": "preprint",
  "updated_at": "2026-10-30T12:21:25Z",
  "url": "https://research.draconitic.com/paper/ea4k933smzrnx",
  "venue": "arXiv",
  "versions": []
}