{
  "abstract": "Monolithic photonic integrated circuits (PICs) platforms exploiting III-V materials combine passive and active waveguide structures in multi-section optoelectronic device architectures. Their operation requires high electrical isolation between adjacent functional sections without compromising the optical signal. This fundamental requirement is addressed for GaSb-based waveguides, which are known to exhibit high conductivity of p-type layers reducing the electrical isolation capability. To this end, a co-designed electrical-optical isolation strategy based on using deeply etched strip waveguides combined with adiabatic ridge-to-strip waveguide tapers in GaSb-based multiple-quantum-well heterostructures is proposed. While deep etching alone enables isolation resistances of up to 40 k-ohm, it severely degrades optical propagation. By introducing optimized adiabatic tapers, we demonstrate good optical performance as single-mode continuous-wave lasing in a two-section device with integrated absorber, while maintaining an isolation resistance of 17.3 k-ohm; this corresponds to an approximately 17-fold improvement over previously reported GaSb two-section devices. The approach establishes a critical building block for the development of monolithic GaSb-based PICs operating above 2 um.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": "Journal reference: Md Ajwaad Zaman Quashef, Nouman Zia, Jukka Viheriälä, Mircea Guina; Low optical loss electrical isolation for multi-section monolithic GaSb-based photonic circuits. Appl. Phys. Lett. 3 August 2026;…",
  "arxiv": "2608.08629",
  "author_total": 4,
  "authors": [
    {
      "name": "Md Ajwaad Zaman Quashef"
    },
    {
      "name": "Nouman Zia"
    },
    {
      "name": "Jukka Viheriälä"
    },
    {
      "name": "Mircea Guina"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/edd5pdftj0500.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2608.08629",
  "fulltext_url": null,
  "id": "edd5pdftj0500",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2608.08629",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.optics"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2608.08629",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-21",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/edd5pdftj0500.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:34:18Z",
      "native_id": "2608.08629",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2608.08629"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.optics",
      "subfield": "optics-photonics"
    }
  ],
  "title": "Low optical loss electrical isolation for multi-section monolithic GaSb-based photonic circuits",
  "title_text": "Low optical loss electrical isolation for multi-section monolithic GaSb-based photonic circuits",
  "type": "preprint",
  "updated_at": "2026-10-30T12:34:18Z",
  "url": "https://research.draconitic.com/paper/edd5pdftj0500",
  "venue": "arXiv",
  "versions": [
    {
      "doi": "10.1063/5.0343993",
      "pid": null,
      "relation": "published-as",
      "title": null,
      "venue": null
    }
  ]
}