{
  "abstract": "In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The device achieves a subthreshold slope of ~130 mV/dec, a peak transconductance of 0.75 S/mm, and an fmax exceeding 240 GHz. Continuous-wave load-pull measurements at 94 GHz show an output power of 3.75 W/mm with a power-added efficiency of 31.8%. This performance significantly exceeds the best previously reported Ga-polar devices on sapphire and approaches that of state-of-the-art Ga-polar devices on SiC, which provides a promising pathway toward high-performance W-band devices.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": "Journal reference: IEEE Microwave and Wireless Technology Letters, 2026",
  "arxiv": "2610.36492",
  "author_total": 15,
  "authors": [
    {
      "name": "Ruixin Bai"
    },
    {
      "name": "Swarnav Mukhopadhyay"
    },
    {
      "name": "Michael Elliott"
    },
    {
      "name": "Ryan Gilbert"
    },
    {
      "name": "Surjava Sanyal"
    },
    {
      "name": "Darryl Shima"
    },
    {
      "name": "Jiahao Chen"
    },
    {
      "name": "Rafael A. Choudhury"
    },
    {
      "name": "Kyudong Kim"
    },
    {
      "name": "Yu-Chun Wang"
    },
    {
      "name": "Ganesh Balakrishnan"
    },
    {
      "name": "Ahmad E. Islam"
    },
    {
      "name": "Andrew J. Green"
    },
    {
      "name": "Shubhra S. Pasayat"
    },
    {
      "name": "Chirag Gupta"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/eddt7sg124y1a.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.36492",
  "fulltext_url": null,
  "id": "eddt7sg124y1a",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.36492",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.app-ph"
    ]
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  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.36492",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-27",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/eddt7sg124y1a.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:35:50Z",
      "native_id": "2610.36492",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.36492"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    }
  ],
  "title": "Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz",
  "title_text": "Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz",
  "type": "preprint",
  "updated_at": "2026-10-30T12:35:50Z",
  "url": "https://research.draconitic.com/paper/eddt7sg124y1a",
  "venue": "arXiv",
  "versions": [
    {
      "doi": "10.1109/lmwt.2026.3736479",
      "pid": null,
      "relation": "published-as",
      "title": null,
      "venue": null
    }
  ]
}